參數(shù)資料
型號(hào)： MBR890L
廠商： DIODES INC
元件分類： 參考電壓二極管
英文描述： 8.0A SCHOTTKY BARRIER RECTIFIER
中文描述： 8 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AC
封裝： PLASTIC PACKAGE-2
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 63K
代理商： MBR890L
D
S
30029 Rev. B-4
1 of 2
MBR870L-MBR8100L
MBR870L - MBR8100L
8.0A SCHOTTKY BARRIER RECTIFIER
Features
L
M
A
N
P
D
E
K
C
B
J
G
R
Pin 1
Pin 2
1
2
Case
TO-220AC
Min
Dim
A
B
C
D
E
G
J
K
L
M
N
P
R
All Dimensions in mm
Max
14.22
15.88
9.65
10.67
2.54
3.43
5.84
6.86
6.35
12.70
14.73
0.51
1.14
3.53
4.09
3.56
4.83
1.14
1.40
0.30
0.64
2.03
2.92
4.83
5.33
Maximum Ratings and Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 2.24 grams (approx.)
Mounting Position: Any
Marking: Type Number
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
MBR
870L
MBR
880L
MBR
890L
MBR
8100L
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
Non-Repetitive Peak Forward Surge Current,
8.3ms single half sine-wave superimposed on rated load
(JEDEC Method)
Repetitive Peak Forward Surge Current
Forward Voltage Drop
V
RRM
V
RWM
V
R
V
R(RMS)
70
80
90
100
V
49
56
63
70
V
@ T
C
= 125 C
I
O
8.0
A
I
FSM
230
A
@ t
5.0 s
I
FRM
850
0.72
0.58
0.55
7.0
350
2.0
10,000
-55 to +175
A
@ I
F
= 8.0A, T
C
= 25 C
@ I
F
= 8.0A, T
C
= 125 C
V
FM
V
Peak Reverse Current
at Rated DC Blocking Voltage
@ T
C
= 25 C
@ T
C
= 125 C
I
RM
mA
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Voltage Rate of Change (Rated V
R
)
Operating and Storage Temperature Range
C
j
pF
K/W
V/ s
C
R
JC
dV/dt
T
j,
T
STG
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
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