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參數(shù)資料
| 型號(hào)： | MBR850 |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 整流器 |
| 英文描述： | 8 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 72K |
| 代理商： | MBR850 |
MBR830 thru MBR860
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-220AC molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
VRMS
VDC
VRRM
I(AV)
IFSM
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
8
150
TJ
Operating Temperature Range
-55 to +150
C
TSTG
Storage Temperature Range
-55 to +175
C
IR
@TJ =125 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
0.1
15
mA
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
Typical Thermal Resistance (Note 3)
3.0
C/W
R0JC
Voltage Rate of Change (Rated VR)
dv/dt
10000
V/us
VF
Maximum Forward
Voltage (Note 1)
0.57
V
0.84
V
TJ =25 C
TJ =125 C
IF =8A @
IF =16A @
MBR830
30
21
30
MBR835
35
24.5
35
MBR840
40
28
40
MBR845
45
31.5
45
0.70
Maximum Average Forward Rectified
Current at TC=125 C (See Fig.1)
TJ =25 C
MBR850
50
35
50
MBR860
60
42
60
0.70
0.95
0.80
TO-220AC
All Dimensions in millimeter
TO-220AC
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
14.22
15.88
10.67
9.65
2.54
3.43
6.86
5.84
8.26
9.28
-
6.35
12.70
14.73
0.51
5.33
N
M
L
K
J
I
1.14
4.83
0.64
0.30
3.53
4.09
3.56
4.83
1.14
1.40
2.92
2.03
A
B
C
K
J
I
G
F
E
D
N
M
L
H
PIN 1
PIN 2
CASE
PIN
1
2
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 30 to 60 Volts
FORWARD CURRENT - 8.0 Amperes
Typical Junction Capacitance (Note 2)
CJ
250
pF
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance Junction to Case.
SEMICONDUCTOR
LITE-ON
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
REV. 1, Aug-2007, KTHA05
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR850CT | 制造商:PANJIT 制造商全稱(chēng):Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIER |
| MBR850D | 制造商:PANJIT 制造商全稱(chēng):Pan Jit International Inc. 功能描述:D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER |
| MBR850DC | 制造商:PANJIT 制造商全稱(chēng):Pan Jit International Inc. 功能描述:D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER |
| MBR850F | 制造商:PANJIT 制造商全稱(chēng):Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIERS |
| MBR850FCT | 制造商:PANJIT 制造商全稱(chēng):Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIER |
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