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參數(shù)資料
| 型號(hào)： | MBR845RL |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Axial Lead Rectifiers |
| 中文描述： | 8 A, 45 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封裝： | PLASTIC, CASE 267-05, 2 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 146K |
| 代理商： | MBR845RL |
MBR835, MBR840, MBR845
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
0.9 in x 0.9 in
Copper Pad Size
6.75 in
x 6.75 in
Copper Pad Size
Unit
Thermal Resistance
Junction
to
Lead
(See Note 2
Mounting Data)
Thermal Resistance
Junction
to
Ambient
(See Note 2
Mounting Data)
R
θ
JL
R
θ
JA
13
50
12
40
°
C/W
ELECTRICAL CHARACTERISTICS
(T
L
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Max
Unit
Maximum Instantaneous Forward Voltage (Note 1)
(i
F
= 8.0 Amps, T
L
= 25
°
C)
v
F
0.55
V
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 1)
T
L
= 25
°
C
T
L
= 100
°
C
1. Pulse Test: Pulse Width = 300
μ
s, Duty Cycle = 2.0%.
i
R
1.0
50
mA
Figure 1. Typical Forward Voltage
V
F
, INSTANTANEOUS VOLTAGE (VOLTS)
30
10
1
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Figure 2. Maximum Forward Voltage
0.1
Figure 3. Typical Reverse Current
V
R
, REVERSE VOLTAGE (VOLTS)
1E
01
1E
02
1E
03
1E
04
35
30
25
10
20
15
5
0
1E
06
I
F
,
C
I
R
,
50
45
40
1E
05
125
°
C
25
°
C
100
°
C
75
°
C
125
°
C
25
°
C
100
°
C
75
°
C
V
F
, INSTANTANEOUS VOLTAGE (VOLTS)
30
10
1
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.1
I
F
,
C
125
°
C
25
°
C
100
°
C
75
°
C
MBR845
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Typical Capacitance
f = 1 MHz
T
J
= 25
°
C
100
10
1
0.1
C
100
1000
10,000
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