參數資料
型號： MBR7H60-HE3/45
廠商： VISHAY SEMICONDUCTORS
元件分類： 整流器
英文描述： 7.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC
封裝： ROHS COMPLIANT, PLASTIC PACKAGE-2
文件頁數： 1/5頁
文件大?。?/td> 132K
代理商： MBR7H60-HE3/45
New Product
MBR(F,B)7H35 thru MBR(F,B)7H60
Vishay General Semiconductor
Document Number: 88796
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Schottky Barrier Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder dip 260 °C, 40 s (for TO-220AC and
ITO-220AC package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
7.5 A
VRRM
35 V to 60 V
IFSM
150 A
VF
0.55 V, 0.61 V
IR
50 A
TJ max.
175 °C
CASE
PIN 2
PIN 1
TO-220AC
MBR7Hxx
ITO-220AC
MBRF7Hxx
MBRB7Hxx
PIN 1
PIN 2
K
HEATSINK
1
2
1
2
K
PIN 2
PIN 1
TO-263AB
1
2
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR7H35 MBR7H45 MBR7H50 MBR7H60
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Working peak reverse voltage
VRWM
35
45
50
60
V
Maximum DC blocking voltage
VDC
35
45
50
60
V
Max. average forward rectified current (Fig. 1)
IF(AV)
7.5
A
Non-repetitive avalanche energy at 25 °C, IAS = 4 A, L = 10 mH
EAS
80
mJ
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Peak repetitive reverse surge current at tp = 2.0 s, 1 kHz
IRRM
1.0
0.5
A
Peak non-repetitive reverse energy (8/20 s waveform)
ERSM
20
10
mJ
Electrostatic discharge capacitor voltage human body model:
C = 100 pF, R = 1.5 k
Ω
VC
25
kV
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
相關PDF資料
PDF描述
MBRB1060-E3/45 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRB15H35CT-E3/45 7.5 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRB15H35CT-HE3/45 7.5 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRB1660-HE3/45 16 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRB16H45-E3/45 16 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB
相關代理商/技術參數
參數描述
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MBR80100R 功能描述:肖特基二極管與整流器 100V - 80A Schottky Rectifier RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
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