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參數(shù)資料
| 型號： | MBR750 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 7.5 Ampere Schottky Barrier Rectifiers(7.5A肖特基勢壘整流器) |
| 中文描述： | 7.5 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | P9, 2 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 35K |
| 代理商： | MBR750 |
M
MBR735 - MBR760, Rev. A
MBR735 - MBR760
7.5 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
T
A
= 25°C unless otherwise noted
1999 Fairchild Semiconductor Corporation
Symbol
Parameter
Value
Units
I
O
i
f(repetitive)
Average Rectified Current
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 KHz) @ T
A
= 105
°
C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Storage Temperature Range
Operating Junction Temperature
7.5
A
15
A
i
f(surge)
150
A
P
D
2.0
16.6
60
3.0
W
mW/
°
C
°
C/W
°
C/W
°
C
°
C
R
θ
JA
R
θ
JL
T
stg
T
J
-65 to +175
-65 to +150
Parameter
Device
Units
735
35
24
35
745
45
31
45
750
50
35
50
760
60
42
60
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
V
V
V
DC Reverse Voltage
Voltage Rate of Change (Rated V
R
)
Maximum Reverse Current
@ rated V
R
(Rated V
R
)
10,000
V/uS
T
A
= 25
°
C
T
A
= 125
°
C
0.1
15
0.5
50
mA
mA
Maximum Forward Voltage
I
F =
7.5 A, T
C
= 25
°
C
I
F =
7.5 A, T
C
= 125
°
C
I
F =
15 A, T
C
= 25
°
C
I
F =
15 A, T
C
= 125
°
C
Peak Repetitive Reverse Surge Current
2.0 us Pulse Width, f = 1.0 KHz
-
0.57
0.84
0.72
0.75
0.65
-
-
V
V
V
V
1.0
0.5
A
Features
Low power loss, high efficiency.
High surge capacity.
For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
Metal silicon junction, majority carrier
conduction.
High current capacity, low forward
voltage drop.
Guard ring for over voltage protection.
Dimensions
are in:
inches (mm)
DIA
1
2
.412(10.5)
.148(3.74)
.154(3.91)
.103(2.62)
.113(2.87)
.587(14.91)
.594(15.1)
.53(13.46)
.56(14.22)
.14(3.56)
.16(4.06)
.195(4.95)
.205(5.20)
.027(0.68)
.037(0.94)
.175(4.44)
.185(4.70)
.23(5.84)
.27(6.86)
.10(2.54)
.11(2.79)
.014(0.35)
.025(0.64)
.045(1.14)
.055(1.40)
PIN 1 +
CASE
+
PIN 2 -
CASE Positive
TO-220AC
Dimensions are in: inches (mm)
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|---|---|
| MBR735 | 7.5 Ampere Schottky Barrier Rectifiers(7.5A肖特基勢壘整流器) |
| MBRA3045N | SCHOTTKY BARRIER RECTIFIER |
| MBRF20S100CT | Schottky Barrier Rectifier |
| MBRP1545N | Low forward voltage drop |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR750 C0 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 50V 7.5A 2-Pin(2+Tab) TO-220A Tube 制造商:Taiwan Semiconductor 功能描述:Diode Schottky 50V 7.5A 2-Pin(2+Tab) TO-220A Tube |
| MBR750 | 制造商:Fairchild Semiconductor Corporation 功能描述:Schottky Rectifier |
| MBR750/45 | 功能描述:肖特基二極管與整流器 50 Volt 7.5A Single 150 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR750_Q | 功能描述:肖特基二極管與整流器 7.5 amp Rectifiers Schottky Barrier RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR750-E3/45 | 功能描述:肖特基二極管與整流器 50 Volt 7.5A Single 150 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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