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參數(shù)資料
| 型號(hào)： | MBR60L45WTG |
| 廠(chǎng)商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | SWITCHMODE Power Rectifier 45 V, 60 A |
| 中文描述： | 30 A, 45 V, SILICON, RECTIFIER DIODE, TO-247AB |
| 封裝： | LEAD FREE, PLASTIC, CASE 340L-02, 3 PIN |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 120K |
| 代理商： | MBR60L45WTG |
MBR60L45CTG, MBR60L45WTG
http://onsemi.com
2
MAXIMUM RATINGS
(Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
45
V
Average Rectified Forward Current
(Rated V
R
) T
C
= 145
°
C for MBR60L45CTG
(Rated V
R
) T
C
= 165
°
C for MBR60L45WTG
I
F(AV)
30
A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz)
I
FRM
60
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
FSM
200
A
Operating Junction Temperature (Note 1)
T
J
65 to +175
°
C
Storage Temperature
T
stg
65 to +175
°
C
Voltage Rate of Change (Rated V
R
)
dv/dt
10,000
V/ s
ESD Ratings:
Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
THERMAL CHARACTERISTICS
Maximum Thermal Resistance
(MBR60L45CTG)
(MBR60L45WTG)
Junction
to
Case
Junction
to
Case
R
JC
R
JC
1.9
0.59
°
C/W
ELECTRICAL CHARACTERISTICS
(Per Diode Leg)
Maximum Instantaneous Forward Voltage (Note 2)
(I
F
= 30 A, T
C
= 25
°
C)
(I
F
= 30 A, T
C
= 125
°
C)
(I
F
= 60 A, T
C
= 25
°
C)
(I
F
= 60 A, T
C
= 125
°
C)
v
F
0.55
0.53
0.73
0.76
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, T
C
= 25
°
C)
(Rated DC Voltage, T
C
= 125
°
C)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction
to
Ambient: dP
D
/dT
J
< 1/R
JA
.
2. Pulse Test: Pulse Width = 300 s, Duty Cycle
≤
2.0%.
i
R
1.2
275
mA
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