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參數(shù)資料
| 型號(hào)： | MBR60L45CTG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SWITCHMODE Power Rectifier 45 V, 60 A |
| 中文描述： | 30 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 120K |
| 代理商： | MBR60L45CTG |
MBR60L45CTG, MBR60L45WTG
http://onsemi.com
2
MAXIMUM RATINGS
(Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
45
V
Average Rectified Forward Current
(Rated V
R
) T
C
= 145
°
C for MBR60L45CTG
(Rated V
R
) T
C
= 165
°
C for MBR60L45WTG
I
F(AV)
30
A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz)
I
FRM
60
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
FSM
200
A
Operating Junction Temperature (Note 1)
T
J
65 to +175
°
C
Storage Temperature
T
stg
65 to +175
°
C
Voltage Rate of Change (Rated V
R
)
dv/dt
10,000
V/ s
ESD Ratings:
Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
THERMAL CHARACTERISTICS
Maximum Thermal Resistance
(MBR60L45CTG)
(MBR60L45WTG)
Junction
to
Case
Junction
to
Case
R
JC
R
JC
1.9
0.59
°
C/W
ELECTRICAL CHARACTERISTICS
(Per Diode Leg)
Maximum Instantaneous Forward Voltage (Note 2)
(I
F
= 30 A, T
C
= 25
°
C)
(I
F
= 30 A, T
C
= 125
°
C)
(I
F
= 60 A, T
C
= 25
°
C)
(I
F
= 60 A, T
C
= 125
°
C)
v
F
0.55
0.53
0.73
0.76
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, T
C
= 25
°
C)
(Rated DC Voltage, T
C
= 125
°
C)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction
to
Ambient: dP
D
/dT
J
< 1/R
JA
.
2. Pulse Test: Pulse Width = 300 s, Duty Cycle
≤
2.0%.
i
R
1.2
275
mA
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| MBR60L45CTG_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:SWITCHMODE? Power Rectifier |
| MBR60L45WTG | 功能描述:肖特基二極管與整流器 60A / 45V TO-247 RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR6100 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIERS |
| MBR6100CT | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIERS |
| MBR6100F | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIERS |
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