參數資料
型號： MBR60H100CT_06
廠商： ON SEMICONDUCTOR
英文描述： SWITCHMODE Power Rectifier 100 V, 60 A
中文描述： 開關模式電源整流器100伏，60甲
文件頁數： 2/6頁
文件大小： 70K
代理商： MBR60H100CT_06
MBR60H100CT
http://onsemi.com
2
MAXIMUM RATINGS
(Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
100
V
Average Rectified Forward Current
(T
C
= 155
°
C)
Per Diode
Per Device
I
F(AV)
30
60
A
Peak Repetitive Forward Current
(Square Wave, 20 kHz, T
C
= 151
°
C)
I
FRM
60
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
FSM
350
A
Operating Junction Temperature (Note 1)
T
J
+175
°
C
Storage Temperature
T
stg
65 to +175
°
C
Voltage Rate of Change (Rated V
R
)
dv/dt
10,000
V/ s
Controlled Avalanche Energy (see test conditions in Figures 9 and 10)
W
AVAL
400
mJ
ESD Ratings:
Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP
D
/dT
J
< 1/R
JA
.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Thermal Resistance JunctiontoCase (Min. Pad)
JunctiontoAmbient (Min. Pad)
R
JC
R
JA
1.0
70
°
C/W
ELECTRICAL CHARACTERISTICS
(Per Diode Leg)
Characteristic
Symbol
Min
Typ
Max
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 30 A, T
J
= 25
°
C)
(i
F
= 30 A, T
J
= 125
°
C)
(i
F
= 60 A, T
J
= 25
°
C)
(i
F
= 60 A, T
J
= 125
°
C)
v
F
0.80
0.68
0.93
0.81
0.84
0.72
0.98
0.84
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, T
J
= 125
°
C)
(Rated DC Voltage, T
J
= 25
°
C)
2. Pulse Test: Pulse Width = 300 s, Duty Cycle
≤
2.0%.
i
R
2.0
0.0013
10
0.01
mA
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相關代理商/技術參數
參數描述
MBR60H100CTG 功能描述:肖特基二極管與整流器 60A 100V H-Series RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR60L45CTG 功能描述:肖特基二極管與整流器 60A / 45V TO-220 SCHOTTKY RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR60L45CTG_10 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:SWITCHMODE? Power Rectifier
MBR60L45WTG 功能描述:肖特基二極管與整流器 60A / 45V TO-247 RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR6100 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIERS
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