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參數(shù)資料
| 型號： | MBR40H60PT |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 40 A, 60 V, SILICON, RECTIFIER DIODE, TO-247AD |
| 封裝： | PLASTIC, TO-3P, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 60K |
| 代理商： | MBR40H60PT |
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol MBR40H35PT MBR40H45PT MBR40H50PT MBR40H60PT
Unit
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Maximum working peak reverse voltage
VRWM
35
45
50
60
V
Maximum DC blocking voltage
VDC
35
45
50
60
V
Maximum average forward rectified current (See Fig. 1)
IF(AV)
40
A
Peak repetitive forward current per leg at TC = 155 °C
(rated VR, square wave, 20 KHZ)
IFRM
40
A
Non-repetitive avalanche energy per leg
at 25
°C, IAS = 4 A, L = 10 mH
EAS
80
mJ
Peak forward surge current, 8.3 ms single half sine-wave
IFSM
400
A
superimposed on rated load (JEDEC Method)
Peak repetitive reverse surge current (1)
IRRM
2.0
1.0
A
Peak non-repetitive reverse energy (8/20 s waveform)
ERSM
30
25
mJ
Electrostatic discharge capacitor voltage
VC
25
kV
Human body model: C = 100 pF, R = 1.5 k
Thermal resistance from junction to case per leg
R
θJC
1.2
°C/W
Voltage rate of change at (rated VR)
dv/dt
10,000
V/
s
Operating junction temperature range
TJ
– 65 to +175
°C
Storage temperature range
TSTG
– 65 to +175
°C
Features
Plastic package has Underwriters Laboratory
Flammability Classifications 94 V-0
Dual rectifier construction, positive center-tap
Metal silicon junction, majority carrier conduction
High surge capability
Low forward voltage drop, low power loss
and high efficiency
For use in low voltage, high frequency inverters,
free-wheeling, and polarity protection applications
Guardring for overvoltage protection
Rated for reverse surge and ESD
175 °C maximum operation junction temperature
Mechanical Data
Case: JEDEC TO-247AD molded plastic body
Terminals: Lead solderable per MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250°C/10 seconds, 0.17” (4.3 mm) from case
Polarity: As marked
Mounting Position: Any Mounting Torque: 10 in-lbs max.
Weight: 0.2 oz., 5.6 g
PIN 1
PIN 3
CASE
0.245 (6.2)
0.225 (5.7)
0.645 (16.4)
0.625 (15.9)
0.323 (8.2)
0.313 (7.9)
0.142 (3.6)
0.138 (3.5)
0.170
(4.3)
0.086 (2.18)
0.076 (1.93)
0.160 (4.1)
0.140 (3.5)
0.225 (5.7)
0.205 (5.2)
0.127 (3.22)
0.117 (2.97)
0.048 (1.22)
0.044 (1.12)
0.795 (20.2)
0.775 (19.6)
0.840 (21.3)
0.820 (20.8)
1
2
3
0.078 REF
(1.98)
0.203 (5.16)
0.193 (4.90)
10 TYP.
BOTH SIDES
30
10
°
1 REF.
0.118 (3.0)
0.108 (2.7)
0.030 (0.76)
0.020 (0.51)
BOTH
SIDES
PIN 2
TO-247AD (TO-3P)
MBR40H35PT thru MBR40H60PT
Vishay Semiconductors
formerly General Semiconductor
Document Number 88794
www.vishay.com
4-Feb-03
1
New Product
Dual Schottky Barrier Rectifier
Reverse Voltage 35 to 60 V
Forward Current 40 A
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| MBRB15H60CT/31 | 7.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB20H60CT/81 | 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRF10H35 | 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBRF20H45CT | 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF30H60CT | 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR40H60PT-E3/45 | 功能描述:肖特基二極管與整流器 60 Volt 40A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR40L100CT | 制造商:SIRECT 制造商全稱:Sirectifier Global Corp. 功能描述:Power Schottky Rectifier - 40Amp 100Volt |
| MBR40L100PT | 制造商:SIRECT 制造商全稱:Sirectifier Global Corp. 功能描述:Power Schottky Rectifier - 40Amp 100Volt |
| MBR40L15CW | 功能描述:肖特基二極管與整流器 40 Amp 15 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR40L15CW_06 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:SCHOTTKY RECTIFIER |
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