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參數(shù)資料
| 型號(hào)： | MBR40H45CT-E3/45 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 20 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 77K |
| 代理商： | MBR40H45CT-E3/45 |
New Product
MBR40H35CT thru MBR40H60CT
Vishay General Semiconductor
Document Number: 88920
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Schottky Rectifiers
High Barrier Technology for Improved High Temperature Performance
FEATURES
Guardring for overvoltage protection
Low power losses, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Mounting Torque: 10 in-lbs maximum
Polarity: As marked
PRIMARY CHARACTERISTICS
IF(AV)
20 A x 2
VRRM
35 V to 60 V
IFSM
350 A, 320 A
VF at IF = 20 A
0.55 V, 0.60 V
IR
100 A
TJ max.
175 °C
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
1
2
3
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR40H35CT
MBR40H45CT
MBR40H50CT
MBR40H60CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Maximum average forward rectified
current (Fig. 1)
total device
per diode
IF(AV)
40
20
A
Peak forward surge current 8.3 ms
single half sine-wave superimposed on
rated load
per diode
IFSM
350
320
A
Peak repetitive reverse current per diode
at tp = 2 s, 1 kHz
IRRM
1.0
A
Peak non-repetitive reverse surge
energy (8/20 s waveform)
per diode
ERSM
20
mJ
Non-repetitive avalanche energy
at 25 °C, IAS = 3.0 A, L = 5 mH
per diode
EAS
22.5
mJ
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR40H45PT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Schottky Barrier Rectifier |
| MBR40H45PT-E3/45 | 功能描述:肖特基二極管與整流器 45 Volt 40A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR40H50CT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Schottky Barrier Rectifiers |
| MBR40H50CT-E3/45 | 功能描述:肖特基二極管與整流器 50 Volt 40A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR40H50PT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Schottky Barrier Rectifier |
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