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參數(shù)資料
| 型號： | MBR40H100WT |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | SWITCHMODE Power Rectifier100 V, 40 A |
| 中文描述： | 開關(guān)模式電源Rectifier100五，40甲 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 117K |
| 代理商： | MBR40H100WT |
MBR40H100WT
http://onsemi.com
2
MAXIMUM RATINGS
(Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
100
V
Average Rectified Forward Current
T
C
= 148
°
C, per Diode
T
C
= 150
°
C,
per Device
I
F(AV)
20
40
A
Peak Repetitive Forward Current
(Square Wave, 20 kHz) T
C
= 144
°
C
I
FRM
40
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
FSM
200
A
Operating Junction Temperature (Note 1)
T
J
+175
°
C
Storage Temperature
T
stg
65 to +175
°
C
Voltage Rate of Change (Rated V
R
)
dv/dt
10,000
V/ s
Controlled Avalanche Energy (see test conditions in Figures 10 and 11)
W
AVAL
400
mJ
ESD Ratings:
Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
THERMAL CHARACTERISTICS
Maximum Thermal Resistance
Junction
to
Case (min. pad)
Junction
to
Ambient (min. pad)
R
JC
R
JA
2.0
60
°
C/W
ELECTRICAL CHARACTERISTICS
Characterisitc
Symbol
Min
Typ
Max
Unit
Instantaneous Forward Voltage (Note 2)
(I
F
= 20 A, T
J
= 25
°
C)
(I
F
= 20 A, T
J
= 125
°
C)
(I
F
= 40 A, T
J
= 25
°
C)
(I
F
= 40 A, T
J
= 125
°
C)
v
F
0.74
0.61
0.85
0.72
0.80
0.67
0.90
0.76
V
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T
J
= 125
°
C)
(Rated dc Voltage, T
J
= 25
°
C)
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction
to
Ambient: dP
D
/dT
J
< 1/R
JA
.
2. Pulse Test: Pulse Width = 300 s, Duty Cycle
≤
2.0%.
i
R
2.0
0.0012
10
0.01
mA
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