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參數(shù)資料
| 型號(hào)： | MBR4045PT-E3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 40 A, 45 V, SILICON, RECTIFIER DIODE, TO-247AD |
| 封裝： | PLASTIC, TO-3P, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 55K |
| 代理商： | MBR4045PT-E3 |
MBR4035PT thru MBR4060PT
Vishay Semiconductors
formerly General Semiconductor
Document Number 88679
www.vishay.com
07-Feb-02
1
Dual Schottky Barrier Rectifier
Reverse Voltage 35 to 60V
Forward Current 40A
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
MBR4035PT MBR4045PT MBR4050PT MBR4060PT
Unit
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Maximum working peak reverse voltage
VRWM
35
45
50
60
V
Maximum DC blocking voltage
VDC
35
45
50
60
V
Maximum average forward rectified current at TC = 125°C
IF(AV)
40
A
Peak repetitive forward current per leg at TC=120°C
(rated VR, square wave, 20 KHZ)
IFRM
40
A
Peak forward surge current, 8.3ms single
half sine-wave superimposed on rated load
IFSM
400
A
(JEDEC Method)
Peak repetitive reverse surge current (NOTE 1)
IRRM
2.0
1.0
A
Maximum thermal resistance from junction to case per leg
R
ΘJC
1.2
°C/W
Voltage rate of change at (rated VR)
dv/dt
10,000
V/
s
Operating junction temperature range
TJ
– 65 to +150
°C
Storage temperature range
TSTG
– 65 to +175
°C
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
MBR4035PT MBR4045PT MBR4050PT MBR4060PT
Unit
Maximum instantaneous
IF = 20A, TC = 25°C
0.70
0.72
forward voltage per leg at:
IF = 20A, TC = 125°C
VF
0.60
0.62
V
(NOTE 2)
IF = 40A, TC = 25°C
0.80
–
IF = 40A, TC = 125°C
0.75
–
Maximum instantaneous reverse current at
TC = 25°C
IR
1.0
mA
rated DC blocking voltage per leg (NOTE 2)
TC = 125°C
100
Notes: (1) 2.0
s pulse width, f = 1.0 KHZ
(2) Pulse test: 300
s pulse width, 1% duty cycle
Features
Plastic package has Underwriters Laboratory
Flammability Classifications 94V-0
Dual rectifier construction, positive center-tap
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free-wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
250°C/10 seconds, 0.17” (4.3mm) from case
Mechanical Data
Case: JEDEC TO-247AD molded plastic body
Terminals: Lead solderable per MIL-STD-750, Method 2026
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs max.
Weight: 0.2 oz., 5.6 g
PIN 1
PIN 3
CASE
0.245 (6.2)
0.225 (5.7)
0.645 (16.4)
0.625 (15.9)
0.323 (8.2)
0.313 (7.9)
0.142 (3.6)
0.138 (3.5)
0.170
(4.3)
0.086 (2.18)
0.076 (1.93)
0.160 (4.1)
0.140 (3.5)
0.225 (5.7)
0.205 (5.2)
0.127 (3.22)
0.117 (2.97)
0.048 (1.22)
0.044 (1.12)
0.795 (20.2)
0.775 (19.6)
0.840 (21.3)
0.820 (20.8)
1
2
3
0.078 REF
(1.98)
0.203 (5.16)
0.193 (4.90)
10 TYP.
BOTH SIDES
30
10
°
1 REF.
0.118 (3.0)
0.108 (2.7)
0.030 (0.76)
0.020 (0.51)
BOTH
SIDES
PIN 2
TO-247AD (TO-3P)
Dimensions
in inches and
(millimeters)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR4045PT-E3 | 制造商:Vishay Semiconductors 功能描述:SCHOTTKY RECTIFIER |
| MBR4045PT-E3/45 | 功能描述:肖特基二極管與整流器 40 Amp 45 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR4045PTE3/TU | 制造商:Microsemi Corporation 功能描述:40A, 45V, VF=0.70V, TJMAX = 175C - Bulk 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 40A 45V TO-247AD |
| MBR4045PTG | 功能描述:肖特基二極管與整流器 40A 45V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR4045ST | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIERS |
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