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參數(shù)資料
| 型號(hào)： | MBR3080CT |
| 元件分類： | 整流器 |
| 英文描述： | 15 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 64K |
| 代理商： | MBR3080CT |
PAGE . 1
March 09,2011-REV.04
MBR3040CT SERIES
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency.
High current capability
Guardring for overvoltage protection
For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
In compliance with EU RoHS 2002/95/EC directives
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
CURRENT
40 to 200 Volts
30 Amperes
MECHANICAL DATA
Case: TO-220AB molded plastic
Terminals: solder plated, solderable per MIL-STD-750, Method 2026
Polarity: As marked.
Mounting Position: Any
Weight: 0.0655 ounces, 1.859 grams.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Note :
Both Bonding and Chip structure are available.
PA RA ME TE R
S YMB OL MBR3040CT MBR3045CT MBR3050CT MBR3060CT MBR3080CT MBR3090CT MBR30100CT MBR30150CT MBR30200CT UNITS
Ma xi mum Re curre nt P e ak Re ve rs e Voltag e
V
RRM
40
45
50
60
80
90
100
150
200
V
Ma xi mum RMS Vo lta g e
V
RMS
28
31 .5
35
42
56
63
70
10 5
140
V
Ma xi mum D C B lo c ki ng Vo lta ge
V
DC
40
45
50
60
80
90
100
150
200
V
Ma xi mum A verage F o rward C urre nt
I
F(AV)
30
A
P e ak F o rward S urg e C urre nt：8.3 ms s i ng le
ha lf s i ne-wave superi mposed on ra ted load
(JE D EC method)
I
FS M
275
A
Ma xi mum F o rward Vo ltage at 15A per leg
V
F
0 .7
0 .7 5
0 .8
0.9
V
Ma xi mum D C Re ve rs e C urrent
at Ra ted D C B lock i ng Voltag e
T
J =2 5
OC
T
J =1 2 5
OC
I
R
0.1
20
0.0 5
20
mA
Typ i cal Therma l Resi sta nce
R
JC
1.4
OC / W
Op erati ng Junc ti on and Storage Te mperature
Ra ng e
T
J ,T STG
-5 5 to + 1 50
-65 to + 175
OC
0.419(10.66)
0.387(9.85)
0.139(3.55)
MIN.
0.058(1.47)
0.042(1.07)
0.038(0.96)
0.019(0.50)
0.100(2.54)
0.196(5.00)
0.163(4.16)
0.054(1.39)
0.045(1.15)
0.115(2.92)
0.080(2.03)
0.025(0.65)MAX.
0.177(
4.5)
M
A
X
.
0.50(
1
2.7)
MIN
.
0.624(
15.87)
0.548(
13.93)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR3080CTE3/TU | 制造商:Microsemi Corporation 功能描述:30A, 80V, VF=0.80V, TJMAX = 175C - Bulk 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 30A 80V TO220AB |
| MBR3080F | 制造商:ASEMI 制造商全稱:ASEMI 功能描述:Dual High-Voltage Schottky Rectifiers |
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| MBR3080FCTE3/TU | 制造商:Microsemi Corporation 功能描述:30A, 80V, VF=0.80V, TJMAX = 175C - Bulk 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 30A 80V ITO220AB |
| MBR3080PT | 制造商:BILIN 制造商全稱:Galaxy Semi-Conductor Holdings Limited 功能描述:SCHOTTKY BARRIER RECTIFIER |
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