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參數(shù)資料
| 型號(hào)： | MBR3050PT |
| 廠(chǎng)商： | LITE-ON ELECTRONICS INC |
| 元件分類(lèi)： | 整流器 |
| 英文描述： | 30 A, 50 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC, TO-3P, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 72K |
| 代理商： | MBR3050PT |
MBR3030PT thru 3060PT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-3P molded plastic
Polarity : As marked on the body
Weight : 0.2 ounces, 5.6 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
VRMS
VDC
VRRM
I(AV)
IFSM
VF
MBR
3030PT
30
21
30
Maximum Average Forward
Rectified Current (See Fig.1)
@TC
=125 C
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Forward
Voltage (Note 1)
30
200
-
0.60
0.76
0.72
TJ
Operating Temperature Range
-55 to +150
C
TSTG
Storage Temperature Range
-55 to +175
C
Typical Thermal Resistance (Note 2)
1.4
C/W
TJ =25 C
CJ
Typical Junction Capacitance
per element (Note 3)
500
pF
IR
@TJ =125 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
mA
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
Voltage Rate of Change (Rated VR)
TJ =125 C
R0JC
dv/dt
10000
V/us
IF =20A @
IF =30A @
MBR
3035PT
35
24.5
35
MBR
3040PT
40
28
40
MBR
3045PT
45
31.5
45
MBR
3050PT
50
35
50
MBR
3060PT
60
42
60
V
0.70
0.65
-
TJ =125 C
1
60
5
100
TO-3P
PIN 1
PIN 3
PIN 2
CASE
E
L
Q
P
N
M
F
C
B
A
O
K
J
I
H
G
D
L
PIN
1
2
3
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 30 to 60 Volts
FORWARD CURRENT - 30 Amperes
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Thermal Resistance Junction to Case.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
TJ =25 C
All Dimensions in millimeter
DIM.
A
C
D
E
F
G
B
M
L
K
J
I
H
O
P
N
Q
TO-3P
MIN.
MAX.
15.75
16.25
21.75
21.25
19.60
20.10
4.38
3.78
1.88
2.08
4.87
5.13
1.90
2.16
1.22
1.12
2.90
3.20
5.20
5.70
2.10
2.40
0.76
0.51
2.93
3.22
1.93
2.18
20 TYP
4.4TYP.
10 TYP
SEMICONDUCTOR
LITE-ON
REV. 4, Aug-2007, KTHD09
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