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參數(shù)資料
| 型號： | MBR3050PT |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 30 A, 50 V, SILICON, RECTIFIER DIODE, TO-247AD |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 80K |
| 代理商： | MBR3050PT |
SENSITRON
SEMICONDUCTOR
221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
MBR3030PT -MBR3060PT
Data Sheet 2923, Rev. -
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
MBR
3030PT
MBR
3035PT
MBR
3040PT
MBR
3045PT
MBR
3050PT
MBR
3060PT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30
35
40
45
50
60
V
RMS Reverse Voltage
VR(RMS)
21
24.5
28
31.5
35
42
V
Average Rectified Output Current
@TC = 95°C
IO
30
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
200
A
Forward Voltage
@IF = 20A @TC = 25°C
@IF = 20A @TC = 125°C
VFM
0.65
0.60
0.75
0.65
V
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage
@TA = 100°C
IRM
1.0
60
5.0
100
mA
Typical Junction Capacitance (Note 1)
Cj
700
pF
Typical Thermal Resistance Junction to Case (Note 2)
R JC
1.4
2.0
K/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to case mounted on heatsink.
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| MBR3050PT _T0 _10001 | 制造商:PanJit Touch Screens 功能描述: |
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