參數(shù)資料
型號： MBR3050
廠商： Fairchild Semiconductor Corporation
英文描述： 30 Ampere Schottky Barrier Rectifiers
中文描述： 三十安培肖特基
文件頁數(shù)： 1/3頁
文件大小： 35K
代理商： MBR3050
M
MBR3035PT - MBR3060PT, Rev. A
MBR3035PT - MBR3060PT
30 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
T
A
= 25°C unless otherwise noted
1999 Fairchild Semiconductor Corporation
Symbol
Parameter
Value
Units
I
O
i
f(repetitive)
Average Rectified Current
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 KHz) @ T
A
= 130
°
C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Lead
Storage Temperature Range
Operating Junction Temperature
30
A
30
A
i
f(surge)
200
A
P
D
3.0
25
1.4
W
mW/
°
C
°
C/W
°
C
°
C
R
θ
JL
T
stg
T
J
-65 to +175
-65 to +150
Parameter
Device
Units
3035PT
35
24
35
3045PT
45
31
45
3050PT
50
35
50
3060PT
60
42
60
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
V
V
V
DC Reverse Voltage
Voltage Rate of Change (Rated V
R
)
Maximum Reverse Current
@ rated V
R
(Rated V
R
)
10,000
V/uS
T
A
= 25
°
C
T
A
= 125
°
C
1.0
60
5.0
100
mA
mA
Maximum Forward Voltage
I
F =
20 A, T
C
= 25
°
C
I
F =
20 A, T
C
= 125
°
C
I
F =
30 A, T
C
= 25
°
C
I
F =
30 A, T
C
= 125
°
C
Peak Repetitive Reverse Surge
Current
2.0 us Pulsu Width, f = 1.0 KHz
-
0.60
0.76
0.72
0.75
0.65
-
-
V
V
V
V
1.0
0.5
A
Features
Low power loss, high efficiency.
High surge capacity.
For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
Metal silicon junction, majority carrier
conduction.
High current capacity, low forward
voltage drop.
Guard ring for over voltage protection.
TO-3P/
TO-247AD
Dimensions are in: inches (mm)
+
CASE
PIN 2
PIN 3
PIN 1
0.193(4.90)
0.203(5.16)
10°
30°
0.078(1.98)
0.108(2.7)
0.118(3.0)
0.020(0.51)
0.030(0.76)
10°
TYP
BOTH SIDES
1
2
3
0.625(15.9)
0.645(16.4)
.17(4.3)
0.076(1.93)
0.086(2.18)
0.044(1.12)
0.048(1.22)
0.205(5.2)
0.225(5.7)
0.225(5.7)
0.245(6.2)
0.114(2.9)
0.134(3.4)
0.313(7.9)
0.323(8.2)
0.117(2.97)
0.127(3.22)
0.14(3.5)
0.16(4.1)
0.775(19.7)
0.795(20.2)
0.82(20.8)
0.84(21.3)
相關PDF資料
PDF描述
MBR3045PT 30 Ampere Schottky Barrier Rectifiers(30A肖特基勢壘整流器)
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相關代理商/技術參數(shù)
參數(shù)描述
MBR3050/3P 制造商:ASEMI 制造商全稱:ASEMI 功能描述:Dual High-Voltage Schottky Rectifiers
MBR3050CT 功能描述:肖特基二極管與整流器 30A 50V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR3050CTE3/TU 制造商:Microsemi Corporation 功能描述:30A, 50V, VF=0.75V, TJMAX = 175C - Bulk 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 30A 50V TO220AB
MBR3050F 制造商:ASEMI 制造商全稱:ASEMI 功能描述:Dual High-Voltage Schottky Rectifiers
MBR3050FCT 制造商:CTC 制造商全稱:Compact Technology Corp. 功能描述:SCHOTTKY BARRIER RECTIFIERS
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