參數(shù)資料
型號： MBR2530CT
廠商： LITE-ON SEMICONDUCTOR CORP
元件分類： 整流器
英文描述： 30 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝： PLASTIC PACKAGE-3
文件頁數(shù)： 1/3頁
文件大小： 84K
代理商： MBR2530CT
MBR2530CT thru 2560CT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
MBR
2550CT
50
35
50
MBR
2560CT
60
42
60
VRMS
VDC
VRRM
I(AV)
IFSM
VF
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward
Voltage (per leg)
at (Note 1)
30
150
TJ
Operating Temperature Range
-55 to +150
C
TSTG
Storage Temperature Range
-55 to +175
C
IR
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ=125 C
@TJ=25 C
1.0
50.0
mA
V
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
0.75
0.65
-
Voltage rate of change (Rated VR)
dv/dt
V/us
10,000
Typical Thermal Resistance (Note 3)
R0JC
C/W
1.5
@TJ=125 C
@TJ=25 C
@TC=130 C
TO-220AB
All Dimensions in millimeter
TO-220AB
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
14.22
15.88
10.67
9.65
2.54
3.43
6.86
5.84
8.26
9.28
-
6.35
12.70
14.73
0.51
2.79
N
M
L
K
J
I
1.14
2.29
0.64
0.30
3.53
4.09
3.56
4.83
1.14
1.40
2.92
2.03
PIN 1
PIN 3
PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
PIN
1
3
2
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 30 to 60 Volts
FORWARD CURRENT - 30 Amperes
MBR
2545CT
45
31.5
45
MBR
2530CT
30
21
30
MBR
2535CT
35
24.5
35
MBR
2540CT
40
28
40
@TJ=125 C
@TJ=25 C
IF = 15A,
IF = 30A,
-
0.82
0.73
0.2
40.0
Typical Junction Capacitance
per element (Note 2)
CJ
450
pF
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance Junction to Case.
SEMICONDUCTOR
LITE-ON
REV. 2,Oct-2010, KTHC15
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