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參數(shù)資料
| 型號： | MBR2100CTG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 54K |
| 代理商： | MBR2100CTG |
MBR2060CT, MBR2080CT, MBR2090CT, MBR20100CT
http://onsemi.com
2
MAXIMUM RATINGS (Per Diode Leg)
MBR
Rating
Symbol
2060CT
2080CT
2090CT
20100CT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
60
80
90
100
V
Average Rectified Forward Current
(Rated VR) TC = 133°C
IF(AV)
10
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 133°C
IFRM
20
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)
IFSM
150
A
Peak Repetitive Reverse Surge Current (2.0
ms, 1.0 kHz)
IRRM
0.5
A
Operating Junction Temperature
TJ
*65 to +150
°C
Storage Temperature
Tstg
*65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/
ms
THERMAL CHARACTERISTICS
Maximum Thermal Resistance JunctiontoCase
JunctiontoAmbient
RqJC
RqJA
2.0
60
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 10 Amps, TC = 125°C)
(iF = 10 Amps, TC = 25°C)
(iF = 20 Amps, TC = 125°C)
(iF = 20 Amps, TC = 25°C)
vF
0.75
0.85
0.95
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TC = 125°C)
(Rated dc Voltage, TC = 25°C)
iR
6.0
0.1
mA
1. Pulse Test: Pulse Width = 300
ms, Duty Cycle ≤ 2.0%.
ORDERING INFORMATION
Device
Package
Shipping
MBR2060CT
TO220
MBR2060CTG
TO220
(PbFree)
50 Units / Rail
MBR2080CT
TO220
MBR2080CTG
TO220
(PbFree)
50 Units / Rail
MBR2090CT
TO220
MBR2090CTG
TO220
(PbFree)
50 Units / Rail
MBR2100CT
TO220
MBR2100CTG
TO220
(PbFree)
50 Units / Rail
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBR2535CT-BP | 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR2540CT-BP | 30 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR2520CT-BP | 30 A, 20 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR3035WTPBF | 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-247AC |
| MBR3045WTPBF | 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-247AC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR2200_R2_10001 | 制造商:PanJit Touch Screens 功能描述: |
| MBR230LSFT1G | 功能描述:肖特基二極管與整流器 2A 30V SCHOTTKY RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR230LSFT1G | 制造商:ON Semiconductor 功能描述:SCHOTTKY RECTIFIER 2A 30V SOD-123FL |
| MBR25100CT | 功能描述:肖特基二極管與整流器 30 Amp 100 Volt Dual RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR25150CT | 功能描述:肖特基二極管與整流器 30 Amp 150 Volt Dual RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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