參數(shù)資料
型號: MBR20H100CT
廠商: GENERAL SEMICONDUCTOR INC
元件分類: 參考電壓二極管
英文描述: 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
文件頁數(shù): 2/4頁
文件大?。?/td> 220K
代理商: MBR20H100CT
Maximum Ratings (TC = 25°C unless otherwise noted)
Parameter
Symbol
MBR20H90CT
MBR20H100CT
Unit
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current
Total device
20
Per leg
IF(AV)
10
A
Peak forward surge current
8.3ms single half sine-wave superimposed
IFSM
250
A
on rated load (JEDEC Method) per leg
Peak repetitive reverse current per leg at tp = 2
s, 1KHZ
IRRM
1.0
A
Voltage rate of change (rated VR)
dv/dt
10,000
V/
s
Operating junction and storage temperature range
TJ, TSTG
–65 to +175
°C
RMS Isolation voltage (MBRF type only) from terminals
4500 (1)
to heatsink with t = 1 second, RH
≤ 30%
VISOL
3500 (2)
V
1500 (3)
Electrical Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Maximum instantaneous
IF = 10A,
TC = 25°C
0.77
forward voltage per leg at(4):IF = 10A,
TC = 125°C
0.64
IF = 20A,
TC = 25°C
VF
0.88
V
IF = 20A,
TC = 125°C
0.73
Maximum reverse current per leg
TJ = 25°C
4.5
A
at working peak reverse voltage
TJ = 125°C
IR
6.0
mA
Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
MBR
MBRF
MBRB
Unit
Typical thermal resistance per leg
R
ΘJC
2.7
5.8
2.7
°C/W
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is
≤ 4.9 mm (0.19”)
(4) Pulse test: 300
s pulse width, 1% duty cycle
MBR20H100CT, MBRF20H100CT
& MBRB20H100CT /CT-1Series
Dual High-Voltage Schottky Rectifiers
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