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參數(shù)資料
| 型號： | MBR2070CT |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | 整流器 |
| 英文描述： | 20 A, 70 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 81K |
| 代理商： | MBR2070CT |
MBR2070CT thru 20100CT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
VRMS
VDC
VRRM
I(AV)
IFSM
MBR2070CT
70
49
70
Maximum Average Forward
Rectified Current (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
20
150
TJ
Operating Temperature Range
-55 to +150
C
TSTG
Storage Temperature Range
-55 to +175
C
Typical Thermal Resistance (Note 2)
R0JC
2.0
C/W
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
VF
V
Voltage Rate of Change (Rated VR)
dv/dt
10000
IR
@TJ =125 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
0.1
100
mA
TC =120 C
Maximum Forward
Voltage (Note 1)
TJ =125 C
TJ =25 C
IF=10A @
IF=20A @
TJ =125 C
TJ =25 C
MBR2080CT
80
56
80
MBR2090CT
90
63
90
MBR20100CT
100
70
100
V/us
0.75
0.85
0.95
TO-220AB
All Dimensions in millimeter
TO-220AB
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
14.22
15.88
10.67
9.65
2.54
3.43
6.86
5.84
8.26
9.28
-
6.35
12.70
14.73
0.51
2.79
N
M
L
K
J
I
1.14
2.29
0.64
0.30
3.53
4.09
3.56
4.83
1.14
1.40
2.92
2.03
PIN 1
PIN 3
PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
PIN
1
3
2
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 70 to 100 Volts
FORWARD CURRENT - 20 Amperes
Typical Junction Capacitance
per element (Note 3)
CJ
250
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Thermal Resistance Junction to Case.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
pF
SEMICONDUCTOR
LITE-ON
REV. 8, Oct-2010, KTHC09
O
1.50
1.14
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| MBR30100CT | 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
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| MBR590 | 5 A, 90 V, SILICON, RECTIFIER DIODE, DO-201AD |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR2070CT_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER |
| MBR2080 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:SCHOTTKY RECTIFIER 20 Amp |
| MBR2080-1 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:SCHOTTKY RECTIFIER 20 Amp |
| MBR2080-1P | 制造商:IRF 制造商全稱:International Rectifier 功能描述:SCHOTTKY RECTIFIER 20 Amp |
| MBR2080-1PBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:SCHOTTKY RECTIFIER 20 Amp |
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