
1
Rectifier Device Data
. . . using the Schottky Barrier principle with a platinum barrier metal. These
state–of–the–art devices have the following features:
20 Amps Total (10 Amps Per Diode Leg)
Guard–Ring for Stress Protection
Low Forward Voltage
150
°
C Operating Junction Temperature
Guaranteed Reverse Avalanche
Epoxy Meets UL94, VO at 1/8
″
Low Power Loss/High Efficiency
High Surge Capacity
Low Stored Charge Majority Carrier Conduction
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.9 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
Lead Temperature for Soldering Purposes: 260
°
C Max. for 10 Seconds
Shipped 50 units per plastic tube
Marking: B2060, B2070, B2080, B2090, B20100
MAXIMUM RATINGS PER DIODE LEG
Rating
Symbol
MBR
Unit
2060CT
2070CT
2080CT
2090CT
20100CT
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
60
70
80
90
100
Volts
Average Rectified Forward Current
(Rated VR) TC = 133
°
C
IF(AV)
10
Amps
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 133
°
C
IFRM
20
Amps
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)
IFSM
150
Amps
Peak Repetitive Reverse Surge Current (2.0
μ
s, 1.0 kHz)
IRRM
TJ
Tstg
dv/dt
0.5
Amp
Operating Junction Temperature
65 to +150
°
C
Storage Temperature
65 to +175
°
C
Voltage Rate of Change (Rated VR)
THERMAL CHARACTERISTICS
10,000
V/
μ
s
Maximum Thermal Resistance — Junction to Case
— Junction to Ambient
R
θ
JC
R
θ
JA
2.0
60
°
C/W
SWITCHMODE is a trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MBR2060CT/D
SEMICONDUCTOR TECHNICAL DATA
1
3
2, 4
SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
60–100 VOLTS
CASE 221A–06
TO–220AB
PLASTIC
MBR2060CT and MBR20100CT
are Motorola Preferred Devices
1
3
4
2
Rev 2