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參數(shù)資料
| 型號(hào)： | MBR16HXX |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Schottky Barrier Rectifiers |
| 中文描述： | 肖特基 |
| 文件頁數(shù)： | 3/3頁 |
| 文件大小： | 72K |
| 代理商： | MBR16HXX |
MBR16Hxx, MBRF16Hxx & MBRB16Hxx Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88784
03-Mar-03
www.vishay.com
3
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
1
10
100
0
25
50
75
100
125
150
Fig. 3 – Typical Instantaneous
Forward Characteristics
Fig. 5 – Typical Junction
Capacitance
Fig. 6 – Typical Transient
Thermal Impedance
Number of Cycles at 60 H
Z
Reverse Voltage (V)
P
0
5
10
15
20
0
25
50
75
100
125
150
175
Fig. 1 – Forward Current
Derating Curve
A
Case Temperature (
°
C)
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current
0.01
0.1
0.1
0.2
Instantaneous Forward Voltage (V)
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
10
100
I
Fig. 4 – Typical Reverse
Characteristics
I
(
Percent of Rated Peak Reverse Voltage (%)
t, Pulse Duration (sec.)
T
°
C
p
0
20
60
40
100
80
0.0001
0.001
0.1
0.01
1
10
100
0.1
1
100
10
1000
100
10000
0.01
0.1
0.1
1
1
10
10
MBR16H35 -- MBR16H45
MBR16H50 -- MBR16H60
MBR16H35 -- MBR16H45
MBR16H50 -- MBR16H60
MBR16H35 -- MBR16H45
MBR16H50 -- MBR16H60
T
J
= 150
°
C
T
J
= 125
°
C
T
J
= 25
°
C
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
T
J
= 25
°
C
f = 1.0 MH
Z
Vsig = 50mVp-p
T
J
= 150
°
C
T
J
= 125
°
C
T
J
= 25
°
C
MBRF
MBR, MBRB
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| MBRB16H35 | Schottky Barrier Rectifiers |
| MBRB16H60 | Schottky Barrier Rectifiers |
| MBRB16HXX | Schottky Barrier Rectifiers |
| MBRF16H35 | Schottky Barrier Rectifiers |
| MBRF16H60 | Schottky Barrier Rectifiers |
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