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參數(shù)資料
| 型號： | MBR1545CT |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Schottky Barrier Power Rectifier(15A,45V肖特基勢壘功率整流器) |
| 中文描述： | 7.5 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | PLASTIC, CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 55K |
| 代理商： | MBR1545CT |
MBR1535CT, MBR1545CT
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MBR1535CT
MBR1545CT
V
RRM
V
RWM
V
R
35
45
V
Average Rectified Forward Current
(T
C
= 163
°
C)
Per Diode
Per Device
I
F(AV)
7.5
15
A
Peak Repetitive Forward Current
(Square Wave, 20 kHz, T
C
= 161
°
C)
Per Diode
I
FRM
15
A
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
150
A
Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz)
I
RRM
T
stg
T
J
dv/dt
1.0
A
Storage Temperature Range
65 to +175
°
C
°
C
Operating Junction Temperature (Note 1)
65 to +175
Voltage Rate of Change (Rated V
R
)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP
D
/dT
J
< 1/R
JA
.
THERMAL CHARACTERISTICS PER DIODE
1000
V/ s
Characteristic
Symbol
Value
Unit
Maximum Thermal Resistance, JunctiontoCase (Min. Pad)
R
JC
3.0
°
C/W
Maximum Thermal Resistance, JunctiontoAmbient (Min. Pad)
R
JA
60
°
C/W
ELECTRICAL CHARACTERISTICS PER DIODE
Characteristic
Symbol
Min
Typ
Max
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 7.5 Amps, T
J
= 125
°
C)
(i
F
= 15 Amps, T
J
= 125
°
C)
(i
F
= 15 Amps, T
J
= 25
°
C)
v
F
0.47
0.63
0.66
0.57
0.72
0.84
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, T
J
= 125
°
C)
(Rated DC Voltage, T
J
= 25
°
C)
2. Pulse Test: Pulse Width = 300 s, Duty Cycle
≤
2.0%
i
R
10
0.025
15
0.1
mA
ORDERING INFORMATION
Device
Package
Shipping
MBR1535CT
TO220
50 Units / Rail
MBR1535CTG
TO220
(PbFree)
50 Units / Rail
MBR1545CT
TO220
50 Units / Rail
MBR1545CTG
TO220
(PbFree)
50 Units / Rail
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
相關PDF資料 |
PDF描述 |
|---|---|
| MBR15XXCT | Dual Schottky Barrier Rectifier |
| MBRB15XXCT | Dual Schottky Barrier Rectifier |
| MBRF15XXCT | Dual Schottky Barrier Rectifier |
| MBR160 | Axial Lead Schottky Barrier Power Rectifier(1A,60V軸向引腳肖特基勢壘功率整流器) |
| MBR1635 | Schottky Barrier Power Rectifier(16A,35V肖特基勢壘功率整流器) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MBR1545CT | 制造商:Fairchild Semiconductor Corporation 功能描述:Schottky Rectifier |
| MBR1545CT/45 | 功能描述:肖特基二極管與整流器 15 Amp 45 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR1545CT_Q | 功能描述:肖特基二極管與整流器 16 amp Rectifier Schottky Barrier RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR1545CT-1 | 功能描述:肖特基二極管與整流器 15 Amp 45 Volt Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR1545CT-1PBF | 制造商:Vishay Angstrohm 功能描述:Diode Schottky 45V 15A 3-Pin(3+Tab) TO-262 Tube |
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