參數(shù)資料
型號(hào): MBR140SFT1
廠(chǎng)商: ON SEMICONDUCTOR
元件分類(lèi): 參考電壓二極管
英文描述: Surface Mount Schottky Power Rectifier(表面安裝的肖特基功率整流器)
中文描述: 1 A, 40 V, SILICON, SIGNAL DIODE
封裝: PLASTIC, CASE 498-01, SOD-123FL, 2 PIN
文件頁(yè)數(shù): 4/6頁(yè)
文件大?。?/td> 62K
代理商: MBR140SFT1
MBR140SFT1
http://onsemi.com
4
Figure 7. Capacitance
T
J
,
T
°
C
Figure 8. Typical Operating Temperature
Derating*
30
0
V
R
, DC REVERSE VOLTAGE (VOLTS)
125
65
55
15
5
10
20
25
40
35
C
30
0
V
R
, REVERSE VOLTAGE (VOLTS)
1000
100
10
15
5
10
20
25
T
J
= 25
°
C
40
35
75
85
95
105
115
R
JA
= 25.6
°
C/W
130
°
C/W
235
°
C/W
324.9
°
C/W
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of T
J
therefore must include forward and reverse power effects. The allowable operating
T
J
may be calculated from the equation:
T
J
= T
Jmax
r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable T
J
due to reverse bias under DC conditions only and is calculated as T
J
= T
Jmax
r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
r
Figure 9. Thermal Response
1000
0.1
0.00001
t
1
, TIME (sec)
1000
1
0.0001
0.001
0.01
1
10
100
0.000001
0.1
10
100
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
JA = 321.8
°
C/W
Test Type > Min Pad < Die Size 38x38 @ 75% mils
D = 0.5
SINGLE PULSE
0.2
0.1
0.05
0.01
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