- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385560 > MBR120ESFT1 (ON SEMICONDUCTOR) Surface Mount Schottky Power Rectifier(表面安裝的肖特基功率整流器) PDF資料下載
參數(shù)資料
| 型號(hào)： | MBR120ESFT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Surface Mount Schottky Power Rectifier(表面安裝的肖特基功率整流器) |
| 中文描述： | 1 A, 20 V, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, CASE 498, 2 PIN |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 61K |
| 代理商： | MBR120ESFT1 |
MBR120ESFT1
http://onsemi.com
4
C
Figure 7. Capacitance
12
0
V
R
, REVERSE VOLTAGE (VOLTS)
1000
100
10
6.0
2.0
4.0
8.0
10
T
J
= 25
°
C
20
18
16
14
Figure 8. Typical Operating Temperature
Derating*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of T
J
therefore must include forward and reverse power effects. The allowable operating
T
J
may be calculated from the equation:
T
J
= T
Jmax
r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable T
J
due to reverse bias under DC conditions only and is calculated as T
J
= T
Jmax
r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
T
J
,
T
°
C
12
0
V
R
, DC REVERSE VOLTAGE (VOLTS)
155
145
6.0
2.0
4.0
8.0
10
20
14
16
18
135
137
139
141
143
147
149
151
153
R
JA
= 25.6
°
C/W
400
°
C/W
324.9
°
C/W
235
°
C/W
130
°
C/W
r
Figure 9. Thermal Response
1000
0.1
0.00001
t
1
, TIME (sec)
1000
1
0.0001
0.001
0.01
1
10
100
0.000001
0.1
10
100
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
JA = 321.8
°
C/W
Test Type > Min Pad < Die Size 38x38 @ 75% mils
D = 0.5
SINGLE PULSE
0.2
0.1
0.05
0.01
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBR120ESFT3 | Surface Mount Schottky Power Rectifier(表面安裝的肖特基功率整流器) |
| MBR120LSFT1 | Surface Mount Schottky Power Rectifier(肖特基整流器 (表面安裝)) |
| MBR120VLSFT1 | Surface Mount Schottky Power Rectifier(表面安裝的肖特基電源整流器) |
| MBR140SFT1 | Surface Mount Schottky Power Rectifier(表面安裝的肖特基功率整流器) |
| MBR140SFT3 | Surface Mount Schottky Power Rectifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR120ESFT1_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Surface Mount Schottky Power Rectifier |
| MBR120ESFT1G | 功能描述:肖特基二極管與整流器 1A 20V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR120ESFT1G-CUT TAPE | 制造商:ON 功能描述:MBR Series 1 A 20 V Surface Mount Schottky Power Rectifier - SOD-123FL |
| MBR120ESFT3 | 功能描述:肖特基二極管與整流器 1A 20V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR120ESFT3G | 功能描述:肖特基二極管與整流器 1A 20V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。