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參數(shù)資料
| 型號： | MBR12080 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | 整流器 |
| 英文描述： | 120 A, 80 V, SILICON, RECTIFIER DIODE |
| 封裝： | ROHS COMPLIANT PACKAGE-1 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 112K |
| 代理商： | MBR12080 |
39.62
19.69
Maximum
Sq.
Dia.
19.18
30.28
4.06
14.73
4.06
15.88
38.61
18.42
Minimum
Millimeter
3.96
13.34
3.86
18.92
30.02
15.37
Dia.
3.30
12.83
3.05
12.57
1.52
.725
.745
1.182
.156
.525
.152
.605
B
A
D
E
G
J
H
F
C
Dim. Inches
Minimum
.120
.495
K
L
1.56
.130
.160
.580
.160
1.192
.625
.505
1/4-20 UNC-2B
.755
.775
Maximum
Notes
Base is anode
Rev. Polarity
Base is cathode
Std. Polarity
D
C
B
F
K
L
E
J
H
A
G
ROHS Compliant
Reverse Energy Tested
175°C Junction Temperature
Guard Ring Protection
120 Amperes/80 to 100 Volts
Schottky Barrier Rectifier
MBR120100
123NQ100
MBR12080
*Add Suffix R for Reverse Polarity
123NQ080
Part Number
Industry
80V
90V
100V
Repetitive Peak
Reverse Voltage
HS12390*
HS12380*
HS123100*
Microsemi
Reverse Voltage
Working Peak
80V
90V
100V
Catalog Number
*Pulse test: Pulse width 300sec, Duty cycle 2%
R
T
I
V
I
T
V
8.3ms, half sine, J = 175°C
f = 1 KHZ, 25°C, 1sec square wave
RRM, J = 125°C*
RRM, J = 25°C
R = 5.0V, C = 25°C
FM = 120A: J = 25°C*
FM = 120A: J = 125°C*
C = 112°C, Square wave,
0JC = 0.40°C/W
I
VFM
I
FM
V
I
RM
R(OV)
F(AV)
FSM
CJ
RM
I
Typical junction capacitance
Average forward current
Maximum surge current
Maximum repetitive reverse current
Max peak forward voltage
Max peak reverse current
3000 pF
Electrical Characteristics
2000 Amps
2 Amps
75 mA
120 Amps
0.91 Volts
.76 Volts
3.0 mA
-55°C to 175°C
0.12°C/W
0.40°C/W
Case to sink
Junction to case
-55°C to 175°C
20-25 inch pounds
1.1 ounces (32 grams) typical
35-40 inch pounds
TJ
R
TSTG
OCS
OJC
Weight
Terminal Torque
Typical thermal resistance (greased)
Max thermal resistance per leg
Operating junction temp range
Storage temp range
Mounting Base Torque
Thermal and Mechanical Characteristics
120 Amp Schottky Rectifier
HS12380-HS123100
January, 2011 - Rev. 6
www.microsemi.com
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR12080CT | 功能描述:肖特基二極管與整流器 SI PWR SCHOTTKY 2TWR 20-100V 120A 80P56RV RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR12080CTR | 功能描述:肖特基二極管與整流器 SI PWR SCHOTTKY 2TWR 20-100V 120A 80P56RV RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR12080R | 制造商:TRSYS 制造商全稱:Transys Electronics 功能描述:SCHOTTKY DIODES MODULE TYPE 120A |
| MBR120ESFT1 | 功能描述:肖特基二極管與整流器 1A 20V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR120ESFT1_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Surface Mount Schottky Power Rectifier |
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