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參數資料
| 型號： | MBR1100RL |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 100 VOLTS |
| 中文描述： | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 |
| 封裝： | LEAD FREE, PLASTIC, CASE 59-10, 2 PIN |
| 文件頁數： | 3/4頁 |
| 文件大?。?/td> | 54K |
| 代理商： | MBR1100RL |
MBR1100
http://onsemi.com
3
Figure 5. Typical Capacitance
20
40
0
V
R
, REVERSE VOLTAGE (VOLTS)
150
50
40
30
20
15
30
C
50
100
60
100
90
80
10
70
80
90
70
60
T
J
= 25
°
C
f
TEST
= 1 MHz
NOTE 1 — MOUNTING DATA:
Data shown for thermal resistance junction-to-ambient
(R
JA)
for the mounting shown is to be used as a typical
guideline values for preliminary engineering or in case the
tie point temperature cannot be measured.
Typical Values for
R
JA
in Still Air
Mounting
Method
Lead Length, L (in)
R
JA
1/8
1/4
1/2
3/4
1
52
65
72
85
°
C/W
2
67
80
87
100
°
C/W
3
—
50
°
C/W
Mounting Method 1
″
P.C. B x 1-1/2
Mounting Method 3
″
P.C. B x 1-1/2
BOAPLANE
VECTOR PIN MOUNTING
Mounting Method 2
éééééééé
éééééééé
L
L
éééééééé
éééééééé
é
é
é
é
L = 3/8
″
NOTE 2 — THERMAL CIRCUIT MODEL:
(For heat conduction through the leads)
T
A(A)
T
A(K)
T
L(A)
T
C(A)
T
J
T
C(K)
T
L(K)
P
D
R
S(A)
R
L(A)
R
J(A)
R
J(K)
R
L(K)
R
S(K)
Use of the above model permits junction to lead thermal
resistance for any mounting configuration to be found. For
a given total lead length, lowest values occur when one side
of the rectifier is brought as close as possible to the heat sink.
Terms in the model signify:
T
A
= Ambient Temperature
T
L
= Lead Temperature
R
S
= Thermal Resistance, Heat Sink to Ambient
R
L
= Thermal Resistance, Lead to Heat Sink
R
J
= Thermal Resistance, Junction to Case
P
D
= Power Dissipation
T
C
= Case Temperature
T
J
= Junction Temperature
(Subscripts A and K refer to anode and cathode sides,
respectively.) Values for thermal resistance components are:
R
L
= 100
°
C/W/in typically and 120
°
C/W/in maximum.
R
θ
J
= 36
°
C/W typically and 46
°
C/W maximum.
NOTE 3 — HIGH FREQUENCY OPERATION:
Since current flow in a Schottky rectifier is the result of
majority carrier conduction, it is not subject to junction
diode forward and reverse recovery transients due to
minority carrier injection and stored charge. Satisfactory
circuit analysis work may be performed by using a model
consisting of an ideal diode in parallel with a variable
capacitance. (See Figure 5)
Rectification efficiency measurements show that
operation will be satisfactory up to several megahertz. For
example, relative waveform rectification efficiency is
approximately 70 percent at 2 MHz, e.g., the ratio of dc
power to RMS power in the load is 0.28 at this frequency,
whereas perfect rectification would yield 0.406 for sine
wave inputs. However, in contrast to ordinary junction
diodes, the loss in waveform efficiency is not indicative of
power loss: it is simply a result of reverse current flow
through the diode capacitance, which lowers the dc output
voltage.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MBR1100RLG | 功能描述:肖特基二極管與整流器 1A 100V RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR1100TR | 功能描述:DIODE SCHOTTKY 100V 1A DO204AL RoHS:是 類別:分離式半導體產品 >> 單二極管/整流器 系列:- 標準包裝:100 系列:- 二極管類型:標準 電壓 - (Vr)（最大）:50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時為正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢復 = 200mA（Io） 反向恢復時間(trr):300ns 電流 - 在 Vr 時反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類型:底座，接線柱安裝 封裝/外殼:DO-203AA，DO-4，接線柱 供應商設備封裝:DO-203AA 包裝:散裝 其它名稱:*1N3879 |
| MBR1100TR | 制造商:International Rectifier 功能描述:Schottky Rectifier |
| MBR1100TR-M3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Rectifier, 1 A |
| MBR1150 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIERS |
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