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參數(shù)資料
| 型號(hào)： | MBR1100 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 100 VOLTS |
| 中文描述： | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 |
| 封裝： | LEAD FREE, PLASTIC, CASE 59-10, 2 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 54K |
| 代理商： | MBR1100 |
MBR1100
http://onsemi.com
2
THERMAL CHARACTERISTICS
(See Note 2)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
JA
See Note 1
°
C/W
ELECTRICAL CHARACTERISTICS
(T
L
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Max
Unit
Maximum Instantaneous Forward Voltage *
(i
F
= 1 A, T
L
= 25
°
C)
(i
F
= 1 A, T
L
= 100
°
C)
V
F
0.79
0.69
Volt
Maximum Instantaneous Reverse Current @ Rated dc Voltage *
(T
L
= 25
°
C)
(T
L
= 100
°
C)
* Pulse Test: Pulse Width = 300 s, Duty Cycle
≤
2.0%.
i
R
0.5
5.0
mA
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current
Figure 3. Current Derating
(Mounting Method 3 per Note 1)
Figure 4. Power Dissipation
0.6
0.9
0
v
F
, INSTANTANEOUS VOLTAGE (VOLTS)
20
10
2.0
5.0
1.0
V
R
, REVERSE VOLTAGE (VOLTS)
60
90
0
0.2
0.1
0.04
0.02
0.01
120
160
0
T
A
, AMBIENT TEMPERATURE (
°
C)
4.0
3.0
2.0
1.0
0
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
1.0
0
4.0
3.0
2.0
1.0
0
2.0
140
iF
I
R
I
PF
0.5
0.2
0.1
0.3
0.1 0.2
0.4 0.5
0.7 0.8
70
80
10
20
30
40
50
0.4
1.0
20
40
60
80
100
3.0
4.0
5.0
0.05
0.02
1.1
1.4
1.0
1.2 1.3
100
,
4.0
2.0
10
20
100
40
200
1 K
400
200
180
,
F
SQUARE WAVE
dc
SQUARE WAVE
dc
T
J
= 150
°
C
100
°
C
25
°
C
T
J
= 150
°
C
125
°
C
100
°
C
The curves shown are typical for the highest voltage
device in the voltage grouping. Typical reverse current for
lower voltage selections can be estimated from these
same curves if V
R
is sufficiently below rated V
R
.
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