參數(shù)資料
型號: MBR1100
廠商: VISHAY INTERTECHNOLOGY INC
元件分類: 參考電壓二極管
英文描述: 1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL
封裝: ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN
文件頁數(shù): 1/6頁
文件大?。?/td> 87K
代理商: MBR1100
Document Number: 93438
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 06-Nov-08
1
Schottky Rectifier, 1 A
MBR1100
Vishay High Power Products
FEATURES
Low profile, axial leaded outline
Very low forward voltage drop
High frequency operation
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Guard ring for enhanced ruggedness and long term
reliability
Lead (Pb)-free plating
Designed and qualified for industrial level
DESCRIPTION
The MBR1100 axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
PRODUCT SUMMARY
IF(AV)
1 A
VR
100 V
DO-204AL
Cathode
Anode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
UNITS
IF(AV)
Rectangular waveform
1.0
A
VRRM
100
V
IFSM
tp = 5 s sine
200
A
VF
1 Apk, TJ = 125 °C
0.68
V
TJ
Range
- 40 to 150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
MBR1100
UNITS
Maximum DC reverse voltage
VR
100
V
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
See fig. 4
IF(AV)
50 % duty cycle at TC = 85 °C, rectangular waveform
10
A
Maximum peak one cycle
non-repetitive surge current
See fig. 6
IFSM
5 s sine or 3 s rect. pulse
Following any rated load
condition and with rated
VRRM applied
200
10 ms sine or 6 ms rect. pulse
50
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 0.5 A, L = 8 mH
1.0
mJ
Repetitive avalanche current
IAR
Current decaying linearly to zero in 1 s
Frequency limited by, TJ maximum VA = 1.5 x VR typical
0.5
A
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