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參數(shù)資料
| 型號： | MBR10T100 |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | ROHS COMPLIANT PACKAGE-2 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 139K |
| 代理商： | MBR10T100 |
Document Number: 94537
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 24-Jul-08
1
High Performance
Schottky Generation 5.0, 10 A
MBR10T100
Vishay High Power Products
FEATURES
175 °C high performance Schottky diode
Very low forward voltage drop
Extremely low reverse leakage
Optimized VF vs. IR trade off for high efficiency
Increased ruggedness for reverse avalanche capability
RBSOA available
Negligible switching losses
Submicron trench technology
Full lead (Pb)-free and RoHS compliant devices
Designed and qualified for industrial level
APPLICATIONS
High efficiency SMPS
Automotive
High frequency switching
Output rectification
Reverse battery protection
Freewheeling
Dc-to-dc systems
Increased power density systems
PRODUCT SUMMARY
IF(AV)
10 A
VR
100 V
VF at 10 A at 125 °C
0.68 V
Anode
1
3
Cathode
TO-220AC
Base
cathode
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
UNITS
VRRM
100
V
VF
10 Apk, TJ = 125 °C (typical)
0.62
TJ
Range
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MBR10T100
UNITS
Maximum DC reverse voltage
VR
TJ = 25 °C
100
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
IF(AV)
50 % duty cycle at TC = 159 °C, rectangular waveform
10
A
Maximum peak one cycle
non-repetitive surge current
IFSM
5 s sine or 3 s rect. pulse
Following any rated load
condition and with rated
VRRM applied
850
A
10 ms sine or 6 ms rect. pulse
200
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 3 A, L = 12 mH
54
mJ
Repetitive avalanche current
IAR
Limited by frequency of operation and time pulse duration so
that TJ < TJ max. IAS at TJ max. as a function of time pulse
See fig. 8
IAS at
TJ max.
A
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