參數(shù)資料
型號: MBR1060G
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: SWITCHMODE Power Rectifiers
中文描述: 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC
封裝: LEAD FREE, PLASTIC, CASE 221B-04, 2 PIN
文件頁數(shù): 2/4頁
文件大小: 67K
代理商: MBR1060G
MBR1060, MBR1080, MBR1090, MBR10100
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
MBR
Unit
1060
1080
1090
10100
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
60
80
90
100
V
Average Rectified Forward Current (Rated V
R
) T
C
= 133
°
C
I
F(AV)
10
A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz) T
C
= 133
°
C
I
FRM
20
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
FSM
150
A
Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz)
I
RRM
0.5
A
Operating Junction Temperature (Note 1)
T
J
65 to +175
°
C
Storage Temperature
T
stg
65 to +175
°
C
Voltage Rate of Change (Rated V
R
)
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP
D
/dT
J
< 1/R
JA
.
dv/dt
10,000
V/ s
THERMAL CHARACTERISTICS
Maximum Thermal Resistance, JunctiontoCase
R
JC
2.0
°
C/W
Maximum Thermal Resistance, JunctiontoAmbient
R
JA
60
°
C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 10 Amps, T
C
= 125
°
C)
(i
F
= 10 Amps, T
C
= 25
°
C)
(i
F
= 20 Amps, T
C
= 125
°
C)
(i
F
= 20 Amps, T
C
= 25
°
C)
v
F
0.7
0.8
0.85
0.95
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T
C
= 125
°
C)
(Rated dc Voltage, T
C
= 25
°
C)
2. Pulse Test: Pulse Width = 300 s, Duty Cycle
2.0%.
i
R
6.0
0.10
mA
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