參數(shù)資料
型號: MBR1045CT
元件分類: 整流器
英文描述: 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數(shù): 1/2頁
文件大?。?/td> 32K
代理商: MBR1045CT
2008. 1. 3
1/2
SEMICONDUCTOR
TECHNICAL DATA
MBR1045CT
SCHOTTKY BARRIER TYPE DIODE
Revision No : 0
SWITCHING TYPE POWER SUPPLY APPLICATION.
CONVERTER & CHOPPER APPLICATION.
FEATURES
Average Output Rectified Current
: IO=10A.
Repetitive Peak Reverse Voltage
: VRRM=45V.
Fast Reverse Recovery Time : trr=35ns.
MAXIMUM RATING (Ta=25
)
DIM
MILLIMETERS
TO-220AB
1.46
A
B
C
D
E
F
G
H
J
K
M
N
O
0.8
0.1
+
_
2.8
0.1
+
_
2.54
0.2
+
_
1.27
0.1
+
_
1.4
0.1
+
_
13.08
0.3
+
_
3.6
0.2
+
_
+
_
9.9
0.2
+
_
9.2
0.2
+
_
4.5
0.2
+
_
2.4
0.2
15.95 MAX
1.3+0.1/-0.05
0.5+0.1/-0.05
3.7
1.5
A
F
B
J
G
K
M
L
E
I
O
C
H
NN
Q
D
Q
P
1. ANODE
2. CATHODE
3. ANODE
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Peak Forward Voltage
(Note)
VFM
IFM=5A
-
0.7
V
Repetitive Peak
Reverse Current
(Note)
IRRM
VRRM=Rated
-
150
Reverse Recovery Time
(Note)
trr
IF=1.0A, di/dt=-30A/
-
35
ns
Thermal Resistance
(Note)
Rth(j-c)
Juction to Case
-
3.0
/W
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
VRRM
45
V
Average Output Rectified
Current (Note)
IO
10
A
Peak One Cycle Surge Forward
Current (Non-Repetitive 60Hz)
IFSM
100
A
Junction Temperature
Tj
-40
150
Storage Temperature Range
Tstg
-55
150
Note : average forward current of centertap full wave connection.
Note : A value of one cell
3
1
2
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