- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄240909 > MBR1045 (VISHAY INTERTECHNOLOGY INC) 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC PDF資料下載
參數(shù)資料
| 型號： | MBR1045 |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 135K |
| 代理商： | MBR1045 |
Document Number: 94284
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 14-Aug-08
1
Schottky Rectifier, 10 A
MBR10..PbF Series
Vishay High Power Products
FEATURES
150 °C TJ operation
TO-220 and D2PAK packages
High frequency operation
Low forward voltage drop
High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical strength and
moisture resistance
Guard ring for enhanced ruggedness and long term
reliability
Lead (Pb)-free (“PbF” suffix)
Designed and qualified for industrial level
DESCRIPTION
This Schottky rectifier has been optimized for low reverse
leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C junction
temperature. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
PRODUCT SUMMARY
IF(AV)
10 A
VR
35/45 V
IRM
15 mA at 125 °C
TO-220AC
Anode
1
3
Cathode
Base
cathode
2
Available
Pb-free
RoHS*
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
UNITS
IF(AV)
Rectangular waveform
10
A
IFRM
TC = 135 °C
20
VRRM
35/45
V
IFSM
tp = 5 s sine
1060
A
VF
10 Apk, TJ = 125 °C
0.57
V
TJ
Range
- 65 to 150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
MBR1035PbF
MBR1045PbF
UNITS
Maximum DC reverse voltage
VR
35
45
V
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
IF(AV)
TC = 135 °C, rated VR
10
A
Peak repetitive forward current
IFRM
Rated VR, square wave, 20 kHz, TC = 135 °C
20
Non-repetitive peak surge current
IFSM
5 s sine or 3 s rect. pulse
Following any rated load condition
and with rated VRRM applied
1060
A
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
150
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 2 A, L = 4 mH
8
mJ
Repetitive avalanche current
IAR
Current decaying linearly to zero in 1 s
Frequency limited by TJ maximum VA = 1.5 x VR typical
2A
* Pb containing terminations are not RoHS compliant, exemptions may apply
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBR760 | 7.5 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBR1550CT | 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR2040CT | 20 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR2050CT | 20 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR4040PT | 40 A, 40 V, SILICON, RECTIFIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR1045 _T0 _10001 | 制造商:PanJit Touch Screens 功能描述: |
| MBR1045 C0 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 45V 10A 2-Pin(2+Tab) TO-220AC Tube |
| MBR1045 | 制造商:Vishay Semiconductors 功能描述:DIODE SCHOTTKY 10A 45V |
| MBR1045/45 | 功能描述:肖特基二極管與整流器 10 Amp 45 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR1045_Q | 功能描述:肖特基二極管與整流器 Schottky Barrier RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復。