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參數(shù)資料
| 型號： | MBR1035PBF |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Diode Schottky 35V 10A 2-Pin(2+Tab) TO-220AC |
| 中文描述： | Schottky (Diodes & Rectifiers) 10 Amp 35 Volt |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 149K |
| 代理商： | MBR1035PBF |
VS-MBR10...PbF Series, VS-MBR10...-N3 Series
www.vishay.com
Vishay Semiconductors
Revision: 29-Aug-11
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
2
Document Number: 94284
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum forward voltage drop
V
FM (1)
20 A
T
J
= 25 °C
0.84
V
10 A
T
J
= 125 °C
0.57
20 A
0.72
Maximum instantaneous reverse current
I
RM
(1)
T
J
= 25 °C
T
J
= 125 °C
Rated DC voltage
0.1
mA
15
Threshold voltage
V
F(TO)
r
t
C
T
L
S
T
J
= T
J
maximum
0.354
V
Forward slope resistance
17.6
m
Maximum junction capacitance
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
600
pF
Typical series inductance
Measured from top of terminal to mounting plane
8.0
nH
Maximum voltage rate of change
dV/dt
Rated V
R
10 000
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction temperature range
T
J
T
Stg
- 65 to 150
°C
Maximum storage temperature range
- 65 to 175
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
R
thJC
DC operation
2.0
°C/W
R
thCS
Mounting surface, smooth and greased
(only for TO-220)
0.50
Approximate weight
2
g
0.07
oz.
Mounting torque
minimum
6 (5)
kgf · cm
(lbf · in)
maximum
12 (10)
Marking device
Case style TO-220AC
MBR1035
MBR1045
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