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參數(shù)資料
| 型號(hào)： | MBR1035 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Schottky Barrier Power Rectifier(10A,35V肖特基勢壘功率整流器) |
| 中文描述： | 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | PLASTIC, CASE 221B-04, 2 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 65K |
| 代理商： | MBR1035 |
MBR1035, MBR1045
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MBR1035
MBR1045
V
RRM
V
RWM
V
R
35
45
V
Average Rectified Forward Current
(T
C
= 135
°
C, Per Diode)
(T
C
= 135
°
C, Per Device)
I
F(AV)
5.0
10
A
Peak Repetitive Forward Current,
(Square Wave, 20 kHz, T
C
= 135
°
C)
I
FRM
10
A
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
150
A
Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz)
I
RRM
1.0
A
Storage Temperature Range
T
stg
65 to +175
°
C
Operating Junction Temperature (Note 1)
T
J
65 to +175
°
C
Voltage Rate of Change
(Rated V
R
)
dv/dt
10,000
V/ s
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP
D
/dT
J
< 1/R
JA
.
THERMAL CHARACTERISTICS
Characteristic
Conditions
Symbol
Max
Unit
Maximum Thermal Resistance, JunctiontoCase
Min. Pad
R
JC
2.0
°
C/W
Maximum Thermal Resistance, JunctiontoAmbient
Min. Pad
R
JA
60
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typical
Max
Unit
Instantaneous Forward Voltage (Note 2)
(i
F
= 10 Amps, T
= 125
°
C)
(i
F
= 20 Amps, Tj = 125
°
C)
(i
F
= 20 Amps, Tj = 25
°
C)
v
F
0.55
0.67
0.78
0.57
0.72
0.84
V
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, Tj = 125
°
C)
(Rated dc Voltage, Tj = 25
°
C)
i
R
5.3
0.008
15
0.1
mA
2. Pulse Test: Pulse Width = 300 s, Duty Cycle
≤
2.0%.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBR1045 | Schottky Barrier Power Rectifier(10A,45V肖特基勢壘功率整流器) |
| MBR1060 | Schottky Barrier Power Rectifier(10A,60V肖特基勢壘功率整流器) |
| MBR10100 | Schottky Barrier Power Rectifier(10A,100V肖特基勢壘功率整流器) |
| MBR1080 | Schottky Barrier Power Rectifier(10A,80V肖特基勢壘功率整流器) |
| MBR1090 | Schottky Barrier Power Rectifier(10A,90V肖特基勢壘功率整流器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR1035/45 | 功能描述:肖特基二極管與整流器 10 Amp 35 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR1035_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Schottky Rectifiers |
| MBR1035_1 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:10.0 AMPS. Schottky Barrier Rectifiers |
| MBR1035_11 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:10.0 AMPS. Schottky Barrier Rectifiers |
| MBR1035_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Schottky Rectifiers |
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