- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄81607 > MBR10100FCT 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB PDF資料下載
參數(shù)資料
| 型號： | MBR10100FCT |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 103K |
| 代理商： | MBR10100FCT |
PAGE . 1
April 21,2011-REV.05
MBR1040FCT SERIES
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency.
High current capability
Guardring for overvlotage protection
For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
In compliance with EU RoHS 2002/95/EC directives
10 AMPERES SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
CURRENT
40 to 200 Volts
10 Amperes
MECHANICAL DATA
Case: ITO-220AB molded plastic
Terminals: solder plated, solderable per MIL-STD-750, Method 2026
Polarity: As marked.
Mounting Position: Any
Weight: 0.055 ounces, 1.5615 grams.
Notes :
Both Bonding and Chip structure are available.
PA RA ME TE R
S YMB OL MBR1040FCT MBR1045FCT MBR1050FCT MBR1060FCT MBR1080FCT MBR1090FCT MBR10100FCT MBR10150FCT MBR10200FCT UNITS
Ma xi mum Re c urre nt P e a k Re ve rse Vo lta g e
V
RRM
40
45
50
60
8 0
9 0
10 0
1 5 0
20 0
V
Ma xi mum RMS Vo lta g e
V
RMS
28
3 1 .5
35
42
5 6
6 3
7 0
10 5
1 40
V
Ma xi mum D C B lo c ki ng Vo lta g e
V DC
40
45
50
60
8 0
9 0
10 0
1 5 0
20 0
V
Ma xi mum A ve rage F o rward C urre nt
(S e e fi g.1)
IF(AV)
10
A
Pe ak F o rward S urg e C urre nt : 8.3 ms s i ng le
ha lf si ne -wave superi mp o se d on ra te d lo ad
(J ED EC me tho d )
IFSM
15 0
A
Ma xi mum F o rwa rd Vo lta ge at 5A , p e r le g
V F
0 .7
0 .7 5
0 .8
0.9
V
Ma xi mum DC Re ve rs e Curre nt T
J =2 5
OC
at Ra ted D C B loc ki ng Vo lta ge T
J =1 2 5
OC
IR
0.05
20
mA
Typ i ca l The rma l Re s i sta nc e
RΘJC
2
OC / W
Op era ti ng and S to rage J uncti on
Te mp erature Ra ng e
TJ,TSTG
-55 to + 150
-6 5 to + 1 7 5
OC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
0.
1
2
(2.
85
)
0
.100
(2
.5
5)
0.406(10.3)
0.381(9.7)
0.134(3.4)
0.118(3.0)
0.055(1.4)
0.039(1.0)
0.055(1.4)
0.039(1.0)
0.028(0.7)
0.019(0.5)
0.100(2.55)
0.
27
2(
6
.9
)
0.
24
8(
6
.3
)
0.60
6(
1
5
.4
)
0.58
3(
1
4
.8
)
0.189(4.8)
0.165(4.2)
0.130(3.3)
0.114(2.9)
0.098(2.5)
0.027(0.67)
0.022(0.57)
0.
17
7(
4
.5)
0.
13
7(
3
.5)
0.54
3(
13
.8
)
0.51
2(
13
.0
)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBR10150FCT | 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR1080DCT/R13 | 10 A, 80 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBR2150 | 2 A, 150 V, SILICON, RECTIFIER DIODE, DO-15 |
| MBR25150FCT | 20 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MMBD717AW | 0.2 A, 20 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR10100G | 功能描述:肖特基二極管與整流器 10A 100V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR10100-M3/4W | 制造商:Vishay Semiconductors 功能描述:10A,100V,TRENCH SKY RECT. |
| MBR10100MFST1G | 制造商:ON Semiconductor 功能描述:10 A 100 V SCHOTTKY DIOD - Tape and Reel |
| MBR1010CT | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER |
| MBR1010FCT | 制造商:KERSEMI 制造商全稱:Kersemi Electronic Co., Ltd. 功能描述:Surge overload -240~500 amperes peak |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。