參數(shù)資料
型號: MBR0520LT3
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Surface Mount Schottky Barrier Power Rectifier(0.5A,20V表貼型肖特基勢壘功率整流器)
中文描述: 0.5 A, 20 V, SILICON, SIGNAL DIODE
封裝: PLASTIC, CASE 425-04, 2 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 58K
代理商: MBR0520LT3
MBR0520LT1, MBR0520LT3
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20
V
Average Rectified Forward Current
(Rated V
R
, T
L
= 90
°
C)
I
F(AV)
0.5
A
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
5.5
A
Storage Temperature Range
T
stg
65 to +150
°
C
Operating Junction Temperature
T
J
65 to +125
°
C
Voltage Rate of Change (Rated V
R
)
dv/dt
1000
V/ s
ESD Ratings:
Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Thermal Resistance; JunctiontoAmbient (Note 1)
R
JA
206
°
C/W
Thermal Resistance; JunctiontoLead
R
JL
150
°
C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2)
v
F
T
J
= 25
°
C
T
J
= 100
°
C
V
(i
F
= 0.1 Amps)
(i
F
= 0.5 Amps)
0.300
0.385
0.220
0.330
Maximum Instantaneous Reverse Current (Note 2)
I
R
T
J
= 25
°
C
T
J
= 100
°
C
mA
(V
R
= 10 V)
(Rated DC Voltage = 20 V)
75 A
250 A
5 mA
8 mA
1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
2. Pulse Test: Pulse Width = 300 s, Duty Cycle
2%.
相關(guān)PDF資料
PDF描述
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