參數(shù)資料
型號(hào)： MBN1200E33C
廠(chǎng)商： HITACHI METALS LTD
元件分類(lèi)： IGBT 晶體管
英文描述： 1200 A, 3300 V, N-CHANNEL IGBT
封裝： MODULE-9
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 388K
代理商： MBN1200E33C
IGBT MODULE
MBN1200E33C
FEATURES
High thermal fatigue durability.
(delta Tc=70 , N
>30,000cycles)
Low noise due to ultra soft fast recovery diode.
High speed, low loss IGBT module.
Low driving power due to low input
capacitance MOS gate.
High reliability, high durability module.
Isolated head sink (terminal to base).
ABSOLUTE MAXIMUM RATINGS (Tc=25oC )
Item
Symbol
Unit
MBN1200E33C
Collector Emitter Voltage
VCES
V
3,300
Gate Emitter Voltage
VGES
V
±20
DC
IC
1,200
Collector Current
1ms
ICp
A
2,400
DC
IF
1,200
Forward Current
1ms
IFM
A
2,400
Junction Temperature
Tj
oC
-40 ~ +125
Storage Temperature
Tstg
oC
-40 ~ +125
Isolation Voltage
VISO
VRMS
6,000(AC 1 minute)
Terminals (M4/M8)
-
2/10
(1)
Screw Torque
Mounting (M6)
-
Nm
6
(2)
Notes: (1) Recommended Value 1.8
±0.2/9±1Nm
(2) Recommended Value 5.5
±0.5Nm
ELECTRICAL CHARACTERISTICS (Tc=25oC )
Item
Symbol Unit
Min.
Typ. Max.
Test Conditions
-
12
VCE=3,300V, VGE=0V, Tj=25oC
Collector Emitter Cut-Off Current
I CES
mA
-
20
60
VCE=3,300V, VGE=0V, Tj=125oC
Gate Emitter Leakage Current
IGES
nA
-
500 VGE=±20V, VCE=0V, Tj=25oC
-
4.1
4.7 IC=1,200A, VGE=15V, Tj=25oC
Collector Emitter Saturation Voltage
VCE(sat)
V
-
4.8
5.3 IC=1,200A, VGE=15V, Tj=125oC
Gate Emitter Threshold Voltage
VGE(TO)
V
4.5
5.5
6.5 VCE=10V, IC=1200mA, Tj=25oC
Input Capacitance
Cies
nF
-
140
-
VCE=10V, VGE=0V, f=100kHz, Tj=25oC
Rise Time
tr
-
2.0
3.2 VCC=1,650V, Ic=1,200A
Turn On Time
ton
-
2.9
3.8 L=100nH
Fall Time
tf
-
1.7
3.2 RG=3.3
(3)
Switching Times
Turn Off Time
toff
s
-
3.5
5.6 VGE=±15V, Tj=125oC
-
2.2
2.8 Ic=1,200A, VGE=0V, Tj=25oC
Peak Forward Voltage Drop
VFM
V
-
2.3
2.75 Ic=1,200A, VGE=0V, Tj=125oC
Reverse Recovery Time
trr
s
-
0.8
1.4 Vcc=1,650V, Ic=1,200A, L=100nH
Tj=125oC
Turn On Loss
Eon(10%)
J/P
-
2.3
2.6
Turn Off Loss
Eoff(10%)
J/P
-
1.4
2.1
Reverse Recovery Loss
Err(10%)
J/P
-
1.5
2.1
VCC=1,650V, Ic=1,200A, L=100nH
RG=3.3
(3)
VGE=±15V, Tj=125oC
IGBT
Rth(j-c)
-
0.0085
Thermal Impedance
FWD
Rth(j-c)
K/W
-
0.017
Junction to case
Notes:(3) RG value is the test condition’s value for evaluation of the switching times, not recommended value.
Please, determine the suitable RG value after the measurement of switching waveforms
(overshoot voltage, etc.) with appliance mounted.
Counter arm IGBT VGE=-15V
Spec.No.IGBT-SP-06010 R1 (P1/5)
OUTLINE DRAWING
Unit in mm
Weight : 1300(g)
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