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參數(shù)資料
| 型號(hào)： | MBM29LV160T-80PN |
| 廠商： | FUJITSU LTD |
| 元件分類： | DRAM |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 1M X 16 FLASH 3V PROM, 80 ns, PDSO46 |
| 封裝： | PLASTIC, SON-46 |
| 文件頁(yè)數(shù)： | 1/60頁(yè) |
| 文件大小： | 767K |
| 代理商： | MBM29LV160T-80PN |
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DS05-20846-4E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
16M (2M
×
8/1M
×
16) BIT
MBM29LV160T
-80/-90/-12
/MBM29LV160B
-80/-90/-12
I
FEATURES
Single 3.0 V read, program and erase
Minimizes system level power requirements
Compatible with JEDEC-standard commands
Uses same software commands as E
2
PROMs
Compatible with JEDEC-standard world-wide pinouts
48-pin TSOP (I) (Package suffix: PFTN-Normal Bend Type, PFTR-Reversed Bend Type)
46-pin SON (Package suffix: PN)
48-pin CSOP (Package suffix: PCV)
48-ball FBGA (Package suffix: PBT)
Minimum 100,000 program/erase cycles
High performance
80 ns maximum access time
Sector erase architecture
One 8K word, two 4K words, one 16K word, and thirty-one 32K words sectors in word mode
One 16K byte, two 8K bytes, one 32K byte, and thirty-one 64K bytes sectors in byte mode
Any combination of sectors can be concurrently erased. Also supports full chip erase
Boot Code Sector Architecture
T = Top sector
B = Bottom sector
Embedded Erase
TM
Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded program
TM
Algorithms
Automatically programs and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
Automatic sleep mode
When addresses remain stable, automatically switches themselves to low power mode
Low V
CC
write inhibit
≤
2.5 V
(Continued)
Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Micro Devices, Inc.
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| MBM29LV160T-90 | CONNECTOR ACCESSORY |
| MBM29LV200B-10 | CMOS 2M (256K×8/128K ×16) Bit Flash Memory(2M (256K×8/128K ×16)位 單5V 電源電壓閃速存儲(chǔ)器) |
| MBM29LV200T-10 | CMOS 2M (256K×8/128K ×16) Bit Flash Memory(2M (256K×8/128K ×16)位 單5V 電源電壓閃速存儲(chǔ)器) |
| MBM29LV200T-12 | CMOS 2M (256K×8/128K ×16) Bit Flash Memory(2M (256K×8/128K ×16)位 單5V 電源電壓閃速存儲(chǔ)器) |
| MBM29LV200B-12 | CMOS 2M (256K×8/128K ×16) Bit Flash Memory(2M (256K×8/128K ×16)位 單5V 電源電壓閃速存儲(chǔ)器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29LV160T-90 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M xⅴ 8/1M x 16) BIT |
| MBM29LV160T-90PBT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT |
| MBM29LV160T-90PBT-SF2 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M xⅴ 8/1M x 16) BIT |
| MBM29LV160T-90PCV | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M xⅴ 8/1M x 16) BIT |
| MBM29LV160T-90PFTN | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M xⅴ 8/1M x 16) BIT |
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