參數(shù)資料
型號： MBM29LV008BA-70PTN
廠商： FUJITSU LTD
元件分類： DRAM
英文描述： 8M (1M X 8) BIT
中文描述： 1M X 8 FLASH 3V PROM, 70 ns, PDSO40
封裝： PLASTIC, TSOP1-40
文件頁數(shù)： 1/51頁
文件大小： 439K
代理商： MBM29LV008BA-70PTN
DS05-20858-4E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
8M (1M
×
8) BIT
MBM29LV008TA
-70/-90/-12
/MBM29LV008BA
-70/-90/-12
I
FEATURES
Single 3.0 V read, program, and erase
Minimizes system level power requirements
Compatible with JEDEC-standard commands
Uses same software commands as E
2
PROMs
Compatible with JEDEC-standard world-wide pinouts
40-pin TSOP(I) (Package suffix: PTN – Normal Bend Type, PTR – Reversed Bend Type)
Minimum 100,000 program/erase cycles
High performance
70 ns maximum access time
Sector erase architecture
One 16K byte, two 8K bytes, one 32K byte, and fifteen 64K bytes
Any combination of sectors can be concurrently erased. Also supports full chip erase
Boot Code Sector Architecture
T = Top sector
B = Bottom sector
Embedded Erase
TM
Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded Program
TM
Algorithms
Automatically writes and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode
Low V
CC
write inhibit
≤
2.5 V
Erase Suspend/Resume
Suspends the erase operation to allow a read data in another sector within the same device
Sector protection
Hardware method disables any combination of sectors from program or erase operations
Sector Protection Set function by Extended sector protection command
Temporary sector unprotection
Temporary sector unprotection via the RESET pin
Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Micro Devices, Inc.
相關(guān)PDF資料
PDF描述
MBM29LV008BA-70PTR 8M (1M X 8) BIT
MBM29LV008BA-90 8M (1M X 8) BIT
MBM29LV008BA-90PTN 8M (1M X 8) BIT
MBM29LV008B CMOS 8M (1M ×8) Bit Flash Memory(1M ×8位 單5V 電源電壓閃速存儲器)
MBM29LV008T CMOS 8M (1M ×8) Bit Flash Memory(1M ×8位 單5V 電源電壓閃速存儲器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29LV008BA-70PTR 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 8M (1M X 8) BIT
MBM29LV008BA-90 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 8M (1M X 8) BIT
MBM29LV008BA-90PTN 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8) BIT
MBM29LV008BA-90PTR 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 8M (1M X 8) BIT
MBM29LV008T12PTN 制造商:FUJI 功能描述:*
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