- 您現在的位置：買賣IC網 > PDF目錄377947 > MBM29LV002TC-70PTN (FUJITSU LTD) 2M (256K x 8) BIT PDF資料下載
參數資料
| 型號： | MBM29LV002TC-70PTN |
| 廠商： | FUJITSU LTD |
| 元件分類： | DRAM |
| 英文描述： | 2M (256K x 8) BIT |
| 中文描述： | 256K X 8 FLASH 3V PROM, 70 ns, PDSO40 |
| 封裝： | PLASTIC, TSOP1-40 |
| 文件頁數： | 1/52頁 |
| 文件大小： | 436K |
| 代理商： | MBM29LV002TC-70PTN |
當前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁
DS05-20863-3E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
2M (256K
×
8) BIT
MBM29LV002TC
-
70/-90/-12
/MBM29LV002BC
-70/-90/-12
I
FEATURES
Single 3.0 V read, program, and erase
Minimizes system level power requirements
Compatible with JEDEC-standard commands
Uses same software commands as E
2
PROMs
Compatible with JEDEC-standard world-wide pinouts
40-pin TSOP(I) (Package suffix: PTN – Normal Bend Type, PTR – Reversed Bend Type)
40-pin SON (Package suffix: PNS)
Minimum 100,000 program/erase cycles
High performance
70 ns maximum access time
Sector erase architecture
One 16K byte, two 8K bytes, one 32K byte, and three 64K bytes
Any combination of sectors can be concurrently erased. Also supports full chip erase
Boot Code Sector Architecture
T = Top sector
B = Bottom sector
Embedded Erase
TM
Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded Program
TM
Algorithms
Automatically writes and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode
Low V
CC
write inhibit
≤
2.5 V
Erase Suspend/Resume
Suspends the erase operation to allow a read data in another sector within the same device
Sector protection
Hardware method disables any combination of sectors from program or erase operations
Sector Protection Set function by Extended sector protection command
Temporary sector unprotection
Temporary sector unprotection via the RESET pin
Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Micro Devices, Inc.
相關PDF資料 |
PDF描述 |
|---|---|
| MBM29LV002TC-70PTR | 2M (256K x 8) BIT |
| MBM29LV002TC-90 | 2M (256K x 8) BIT |
| MBM29LV002B | CMOS 2M (256K ×8) Flash Memory(CMOS 2M(256K ×8)位 單5V 電源電壓閃速存儲器) |
| MBM29LV002T | CMOS 2M (256K ×8) Flash Memory(CMOS 2M(256K ×8)位 單5V 電源電壓閃速存儲器) |
| MBM29LV003T-12 | 2M (256K ×8) Bit Flash Memory(2M (256K ×8)位 單5V 電源電壓閃速存儲器) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MBM29LV002TC-70PTR | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K x 8) BIT |
| MBM29LV002TC-90 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K x 8) BIT |
| MBM29LV002TC-90PNS | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K x 8) BIT |
| MBM29LV002TC-90PTN | 制造商:Fuji Electric 功能描述:NOR Flash, 256K x 8, 40 Pin, Plastic, TSSOP |
| MBM29LV002TC-90PTR | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K x 8) BIT |
發(fā)布緊急采購，3分鐘左右您將得到回復。