參數(shù)資料
型號: MBM29F800TA-70PFTN-E1
廠商: SPANSION LLC
元件分類: PROM
英文描述: 512K X 16 FLASH 5V PROM, 70 ns, PDSO48
封裝: PLASTIC, TSOP1-48
文件頁數(shù): 19/49頁
文件大?。?/td> 693K
代理商: MBM29F800TA-70PFTN-E1
MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90
25
s
s AC CHARACTERISTICS
Read Only Operations Characteristics
*1 : Test Conditions:
Output Load: 1 TTL gate and 30 pF
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V or 3.0 V
Timing measurement reference level
Input: 1.5 V
Output: 1.5 V
Parameter
Symbol
Test
Setup
Value
Unit
-55*1
-70*2
-90*2
JEDEC Standard
Min
Max
Min
Max
Min
Max
Read Cycle Time
tAVAV
tRC
—55
70
90
ns
Address to Output Delay
tAVQV
tACC
CE = VIL
OE = VIL
55
70
90
ns
Chip Enable to Output Delay
tELQV
tCE
OE = VIL
55
70
90
ns
Output Enable to Output Delay
tGLQV
tOE
30
30
40
ns
Chip Enable to Output High-Z
tEHQZ
tDF
15
20
20
ns
Output Enable to Output High-Z
tGHQZ
tDF
15
20
20
ns
Output Hold Time From
Addresses, CE or OE,
Whichever Occurs First
tAXQX
tOH
—0
0
0
ns
RESET Pin Low to Read Mode
tREADY
20
20
20
s
CE to BYTE Switching Low or
High
tELFL
tELFH
5
5
5ns
Test Conditions
CL
5.0 V
Diode = 1N3064
or Equivalent
2.7 k
Device
Under
Test
Diode = 1N3064
or Equivalent
6.2 k
Notes :
CL = 30 pF including jig capacitance (MBM29F800TA/BA-55)
CL = 100 pF including jig capacitance (MBM29F800TA/BA-70/-90)
*2 : Test Conditions:
Output Load: 1 TTL gate and 100 pF
Input rise and fall times: 5 ns
Input pulse levels: 0.45 V or 2.4 V
Timing measurement reference level
Input: 0.8 V and 2.0 V
Output: 0.8 V and 2.0 V
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