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參數(shù)資料
| 型號： | MBM29DL800BA |
| 廠商： | Fujitsu Limited |
| 英文描述： | 8M (1M X 8/512K X 16) BIT |
| 中文描述： | 800萬（100萬X 8/512K × 16）位 |
| 文件頁數(shù)： | 1/59頁 |
| 文件大小： | 600K |
| 代理商： | MBM29DL800BA |
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DS05-20860-3E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
8M (1M
×
8/512K
×
16) BIT
MBM29DL800TA
-70/-90/-12
/MBM29DL800BA
-70/-90/-12
I
FEATURES
Single 3.0 V read, program, and erase
Minimizes system level power requirements
Simultaneous operations
Read-while-Erase or Read-while-Program
Compatible with JEDEC-standard commands
Uses same software commands as E
2
PROMs
Compatible with JEDEC-standard world-wide pinouts (Pin compatible with MBM29LV800TA/BA)
48-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)
48-ball FBGA (Package suffix: PBT)
Minimum 100,000 program/erase cycles
High performance
70 ns maximum access time
Sector erase architecture
Two 16K byte, four 8K bytes, two 32K byte, and fourteen 64K bytes.
Any combination of sectors can be concurrently erased. Also supports full chip erase.
Boot Code Sector Architecture
T = Top sector
B = Bottom sector
Embedded Erase
TM
Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded Program
TM
Algorithms
Automatically writes and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode.
Low V
CC
write inhibit
≤
2.5 V
Erase Suspend/Resume
Suspends the erase operation to allow a read in another sector within the same device
(Continued)
Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Micro Devices, Inc.
相關PDF資料 |
PDF描述 |
|---|---|
| MBM29DL800BA-12 | LED Lamp; Bulb Size:T-1 3/4; LED Color:Red; Luminous Intensity:2000mcd; Viewing Angle:22 ; Forward Current:20mA; Forward Voltage:1.9V; Operating Temperature Range:-25 C to C; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| MBM29DL800TA-70 | 8M (1M X 8/512K X 16) BIT |
| MBM29DL800TA-90 | 8M (1M X 8/512K X 16) BIT |
| MBM29F002BC | 2M (256K X 8) BIT |
| MBM29F002BC-55 | 2M (256K X 8) BIT |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29DL800BA-12 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT |
| MBM29DL800BA-70 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT |
| MBM29DL800BA-70PBT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 8M (1M x 8 / 512K x 16) BIT |
| MBM29DL800BA-70PBT-SF2 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 8M (1M x 8 / 512K x 16) BIT |
| MBM29DL800BA-70PFTN | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 8M (1M x 8 / 512K x 16) BIT |
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