參數(shù)資料
型號(hào)： MBM29DL32XTE
廠商： Fujitsu Limited
英文描述： 32M (4M x 8/2M x 16) BIT Dual Operation
中文描述： 32M的（4米× 8/2M × 16）位雙操作
文件頁數(shù)： 1/80頁
文件大?。?/td> 1588K
代理商： MBM29DL32XTE
DS05-20881-3E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
32M (4M
×
8/2M
×
16) BIT
Dual Operation
MBM29DL32XTE/BE
-80/90/12
I
DESCRIPTION
The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M
words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V
V
CC
supply. 12.0 V V
PP
and 5.0 V V
CC
are not required for write or erase operations. The devices can also be
reprogrammed in standard EPROM programmers.
MBM29DL32XTE/BE are organized into two banks, Bank 1 and Bank 2, which can be considered to be two
separate memory arrays as far as certain operations are concerned. These devices are the same as Fujitsu’s
standard 3 V only Flash memories with the additional capability of allowing a normal non-delayed read access
from a non-busy bank of the array while an embedded write (either a program or an erase) operation is
simultaneously taking place on the other bank.
(Continued)
I
PRODUCT LINE UP
I
PACKAGES
Part No.
MBM29DL32XTE/BE
Ordering Part No.
V
CC
= 3.3 V
+0.3 V
–0.3 V
80
—
—
V
CC
= 3.0 V
+0.6 V
–0.3 V
—
90
12
Max. Address Access Time (ns)
80
90
120
Max. CE Access Time (ns)
80
90
120
Max. OE Access Time (ns)
30
35
50
48-pin plastic TSOP (I)
(FPT-48P-M19)
48-pin plastic TSOP (I)
(FPT-48P-M20)
63-ball plastic FBGA
(BGA-63P-M01)
Marking Side
Marking Side
相關(guān)PDF資料
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