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參數(shù)資料
| 型號： | MBM150GR6 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 150 A, 600 V, N-CHANNEL IGBT |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 65K |
| 代理商： | MBM150GR6 |
1.5
1
0.5
0
0
50
100
150
200
TYPICAL
TYPICAL
TYPICAL
S
μ
s
Collector Current, I
C
(A)
Switching time vs. Collector current
ton
tr
tf
toff
Vcc
=
300V
V
GE
=±
15V
R
G
=
18
T
C
=
25
°
C
Resistive Load
15
10
5
0
0
50
100
200
150
S
o
,
o
,
r
Collector Current. I
C
(A)
Switching loss vs. Collector current
100
10
1
0.1
1
10
100
S
μ
s
Gate Resistance, R
G
(
)
Switching time vs. Gate resistance
ton
toff
V
CC
=
300V
V
GE
=±
15V
I
C
=
150A
T
C
=
25
°
C
Resistive Load
TYPICAL
100
10
1
0.1
1
10
100
S
o
,
o
,
r
Gate Resistance. R
G
(
)
Switching loss vs. Gate resistance
V
CC
=
300V
V
GE
=±
15V
I
C
=
150A
T
C
=
125
°
C
Inductive Load
Err
Err
Eton
Etoff
V
CC
=
300V
V
GE
=±
15V
R
G
=
18
T
C
=
125
°
C
Inductive Load
10000
1000
100
10
1
0
200
400
600
C
Collector to Emitter Voltage, V
CE
(V)
Reverse biased safe operating area
Etoff
Eton
1
0.1
0.01
0.001
0.001
0.01
0.1
1
10
T
t
°
C
Time, t (s)
Transient thermal impedance
Diode
IGBT
V
GE
=±
15V
R
G
=
18
T
C
≤
125
°
C
PDE-M150GR6-0
tf
tr
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