參數(shù)資料
型號(hào)： MBER1070CT
廠商： DIODES INC
元件分類： 整流器
英文描述： 10 A, 70 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝： ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 68K
代理商： MBER1070CT
DS30028 Rev. 2 - 2
1 of 2
MBR1070CT-MBR10100CT
www.diodes.com
Diodes Incorporated
MBR1070CT - MBR10100CT
10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Features
L
M
A
N
P
D
E
K
C
B
G
12 3
J
HH
Pin 1
Pin 3
Pin 2
Case
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
Lead Free Finish, RoHS Compliant (Note 3)
Mechanical Data
Case: TO-220AB
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Polarity: As Marked on Body
Terminals: Finish – Bright Tin. Solderable per
MIL-STD-202, Method 208
Mounting Position: Any
Marking: Type Number
Weight: 2.24 grams (approx)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
MBR
1070CT
MBR
1080CT
MBR
1090CT
MBR
10100CT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
70
80
90
100
V
RMS Reverse Voltage
VR(RMS)
49
56
63
70
V
Average Rectified Output Current
(Note 1)
@ TC = 100
°C
IO
10
A
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
120
A
Forward Voltage Drop
@ IF = 5.0A, TC = 125
°C
@ IF = 5.0A, TC =
25
°C
@ IF = 10A, TC = 125
°C
@ IF = 10A, TC =
25
°C
VFM
0.75
0.85
0.95
V
Peak Reverse Current
@ TC = 25
°C
at Rated DC Blocking Voltage
@ TC = 125
°C
IRM
0.1
50
mA
Typical Junction Capacitance (Note 2)
Cj
300
pF
Typical Thermal Resistance Junction to Case (Note 1)
RqJC
3.0
K/W
Voltage Rate of Change
dV/dt
10,000
V/
ms
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
TO-220AB
Dim
Min
Max
A
14.48
15.75
B
10.00
10.40
C
2.54
3.43
D
5.90
6.40
E
2.80
3.93
G
12.70
14.27
H
2.40
2.70
J
0.69
0.93
K
3.54
3.78
L
4.07
4.82
M
1.15
1.39
N
0.30
0.50
P
2.04
2.79
All Dimensions in mm
SPICE MODEL: MBR10100CT
相關(guān)PDF資料
PDF描述
MBER10100CT 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
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MBR0520L 0.5 A, 20 V, SILICON, SIGNAL DIODE
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