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參數(shù)資料
| 型號： | MBD330DWT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Dual Schottky Barrier Diodes |
| 中文描述： | SILICON, UHF BAND, MIXER DIODE |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 419B-02, SC-70, SC-88, 6 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 72K |
| 代理商： | MBD330DWT1G |
MBD110DWT1, MBD330DWT1, MBD770DWT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(I
R
= 10 A)
MBD110DWT1
MBD330DWT1
MBD770DWT1
V
(BR)R
7.0
30
70
10
V
Diode Capacitance
(V
R
= 0, f = 1.0 MHz, Note 1)
MBD110DWT1
C
D
0.88
1.0
pF
Total Capacitance
(V
R
= 15 Volts, f = 1.0 MHz)
(V
R
= 20 Volts, f = 1.0 MHz)
MBD330DWT1
MBD770DWT1
C
T
0.9
0.5
1.5
1.0
pF
Reverse Leakage
(V
R
= 3.0 V)
(V
R
= 25 V)
(V
R
= 35 V)
MBD110DWT1
MBD330DWT1
MBD770DWT1
I
R
0.02
13
9.0
0.25
200
200
A
nA
nA
Noise Figure
(f = 1.0 GHz, Note 2)
MBD110DWT1
NF
6.0
dB
Forward Voltage
(I
F
= 10 mA)
(I
F
= 1.0 mA)
(I
F
= 10 mA)
(I
F
= 1.0 mA)
(I
F
= 10 mA)
MBD110DWT1
MBD330DWT1
MBD770DWT1
V
F
0.5
0.38
0.52
0.42
0.7
0.6
0.45
0.6
0.5
1.0
V
ORDERING INFORMATION
Device
Marking
Package
Shipping
MBD110DWT1
M4
SC88 / SOT363
3000 Units / Tape & Reel
MBD110DWT1G
SC88 / SOT363
(PbFree)
MBD330DWT1
T4
SC88 / SOT363
MBD330DWT1G
SC88 / SOT363
(PbFree)
MBD770DWT1
H5
SC88 / SOT363
MBD770DWT1G
SC88 / SOT363
(PbFree)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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