參數(shù)資料
型號(hào): MBD101
廠商: ON SEMICONDUCTOR
元件分類(lèi): 參考電壓二極管
英文描述: Schottky Barrier Diodes
中文描述: SILICON, UHF BAND, MIXER DIODE, TO-92
封裝: PLASTIC, CASE 182-06, TO-226AC, 2 PIN
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 59K
代理商: MBD101
MBD101, MMBD101LT1
http://onsemi.com
2
TYPICAL CHARACTERISTICS
(T
A
= 25
°
C unless noted)
Figure 1. Reverse Leakage
T
A
, AMBIENT TEMPERATURE (
°
C)
Figure 2. Forward Voltage
V
F
, FORWARD VOLTAGE (VOLTS)
Figure 3. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Noise Figure
P
LO
, LOCAL OSCILLATOR POWER (mW)
,
IF
,
0.1
0.2
0.5
2.0
1.0
10
11
3.0
0
1.0
2.0
3.0
4.0
1.0
0.9
0.8
0.7
0.6
0.3
0.4
100
0.1
30
40
50
60
70
80
100
0.1
0.07
0.05
130
110
120
90
0.02
1.0
2.0
0.5
0.6
0.7
0.01
1.0
0.7
0.5
10
1.0
Figure 5. Noise Figure Test Circuit
UHF
NOISE SOURCE
H.P. 349A
DIODE IN
TUNED
MOUNT
LOCAL
OSCILLATOR
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz
NOISE
FIGURE METER
H.P. 342A
NOTES ON TESTING AND SPECIFICATIONS
Note 1 — C
C
and C
T
are measured using a capacitance bridge
(Boonton Electronics Model 75A or equivalent).
Note 2 — Noise figure measured with diode under test in tuned
diode mount using UHF noise source and local oscillator
(LO) frequency of 1.0 GHz. The LO power is adjusted
for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see
Figure 5.
Note 3 — L
S
is measured on a package having a short instead of a
die, using an impedance bridge (Boonton Radio Model
250A RX Meter).
0.2
V
R
= 3.0 Vdc
5.0
4.0
7.0
6.0
9.0
8.0
10
LOCAL OSCILLATOR FREQUENCY = 1.0 GHz
(TEST CIRCUIT IN FIGURE 5)
5.0
T
A
= 25
°
C
T
A
= 40
°
C
T
A
= 85
°
C
N
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