參數(shù)資料
型號: MB9AF114NBGL
元件分類: 微控制器/微處理器
英文描述: RISC MICROCONTROLLER, PBGA112
封裝: 0.80 MM PITCH, PLASTIC, FBGA-112
文件頁數(shù): 110/112頁
文件大小: 1225K
代理商: MB9AF114NBGL
97
FUJITSU SEMICONDUCTOR CONFIDENTIAL
r2.1
MB9A110 Series
DS706-00011-1v0-E
Flash Memory Write/Erase Characteristics
(Vcc = 2.7V to 5.5V, Ta = - 40°C to + 105°C)
Value
Parameter
Min
Typ
Max
Value
Remarks
Large Sector
0.7
3.3
Sector
erase time Small Sector
-
0.3
1.1
s
Includes write time prior to
internal erase
Half word (16 bit)
write time
-
12
384
μs
Not including system-level
overhead time.
64K/128K/256KByte
5.2
23.6
s
Chip
erase time 384K/512KByte
-
8
38.4
s
Includes write time prior to
internal erase
Erase/write cycles and data hold time (targeted value)
Erase/write cycles
(cycle)
Data hold time
(year)
Remarks
1,000
20 *
10,000
10 *
100,000
5 *
*: This value comes from the quality and reliability test (using Arrhenius equation to translate high temperature
stress test result into normalized value at + 85°C) .
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