參數(shù)資料
型號: MB95F114NSPMC
廠商: FUJITSU LTD
元件分類: 微控制器/微處理器
英文描述: 8-BIT, FLASH, 16.25 MHz, MICROCONTROLLER, PQFP52
封裝: 10 X 10 MM, 1.70 MM HEIGHT, 0.65 MM PITCH, PLASTIC, LQFP-52
文件頁數(shù): 60/76頁
文件大?。?/td> 2396K
代理商: MB95F114NSPMC
MB95110M Series
DS07-12611-6E
63
6.
Flash Memory Program/Erase Characteristics
Except MB95F116MAW/F116NAW/F116MAS/F116NAS
*1 : TA
= + 25 °C, VCC = 5.0 V, 10000 cycles
*2 : TA
= + 85 °C, VCC = 4.5 V, 10000 cycles
*3 : This value comes from the technology qualification (using Arrhenius equation to translate high temperature
measurements into normalized value at
+85 °C) .
For MB95F116MAW/F116NAW/F116MAS/F116NAS
*1 : TA
= + 25 °C, VCC = 5.0 V, 10000 cycles
*2 : TA
= + 85 °C, VCC = 4.5 V, 10000 cycles
*3 : This value comes from the technology qualification (using Arrhenius equation to translate high temperature
measurements into normalized value at
+85 °C) .
Parameter
Condi-
tions
Value
Unit
Remarks
Min
Typ
Max
Sector erase time
(4 Kbytes sector)
0.2*1
0.5*2
s
Excludes 00H programming prior
erasure.
Sector erase time
(16 Kbytes sector)
0.5*1
7.5*2
s
Excludes 00H programming prior
erasure.
Byte programming time
32
3600
μs
Excludes system-level overhead.
Program/erase cycle
10000
cycle
Power supply voltage at
program/erase
4.5
5.5
V
Flash memory data
retention time
20*3
year
Average TA
= +85 °C
Parameter
Condi-
tions
Value
Unit
Remarks
Min
Typ
Max
Chip erase time
1.0*1
15.0*2
s
Excludes 00H programming prior
erasure.
Byte programming time
32
3600
μs
Excludes system-level overhead.
Program/erase cycle
10000
cycle
Power supply voltage at
program/erase
4.5
5.5
V
Flash memory data
retention time
20*3
year
Average TA
= +85 °C
相關(guān)PDF資料
PDF描述
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